Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Catastrophic Degradation of Ingan/Gan Blue Laser Diodes

Identification of degradation mechanisms of blue InGaN/GaN laser diodes

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Rapid Degradation of InGaN/GaN Green Laser Diodes

Identification of Degradation Mechanisms Based on Thermal Characteristics of InGaN/GaN Laser Diodes

Investigation of InGaN/GaN Laser Degradation Based on Luminescence Properties

Investigation of Rapid Degradation in GaN-based Blue Laser Diodes

Asymmetrical Quantum Well Degradation of InGaN/GaN Blue Laser Diodes Characterized by Photoluminescence

Degradation Study of InGaN-based Laser Diodes Grown on Si

Suppression Of Thermal Degradation Of Ingan/Gan Quantum Wells In Green Laser Diode Structures During The Epitaxial Growth

Research on Degradation Characteristics of GaN-based LD

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes.

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes Analysis of Aged Devices Using Fluorescence Microscopy is Used to Assess the Role That Point Defects Play in Generating Optical Damage and Additional Defects.

Degradation Behaviors of High Power Gan-Based Blue Light Emitting Diodes

Investigation On Transient Catastrophic Optical Damage In High Power Aigaas/Gaas Laser Diodes

Atomic-level Quantum Well Degradation of GaN-based Laser Diodes Investigated by Atom Probe Tomography

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Optical Defect in Gan-Based Laser Diodes Detected by Cathodoluminescence

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Defects and Degradation of Nitride-based Laser Diodes