Abstract:Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive the success of fabricating semiconductor devices in scale when a large low-cost native substrate is not available. Here, we successfully synthesized three different phases of Ga2O3 (alpha, beta, and epsilon) films on c-plane sapphire by only tuning the flow rate of HCl along with other precursors in an MOCVD reactor. A 3-fold increase in the growth rate of pure beta-Ga2O3 was achieved by introducing only 5 sccm of HCl flow. With continuously increased HCl flow, a mixture of beta- and epsilon-Ga2O3 was observed, until the Ga2O3 film transformed completely to a pure e-Ga2O3 with a smooth surface and the highest growth rate (similar to 1 mu m/h) at a flow rate of 30 sccm. At 60 sccm, we found that the film tended to have a mixture of a- and epsilon-Ga2O3 with a dominant alpha-Ga2O3, while the growth rate dropped significantly (similar to 0.4 mu m/h). The film became rough as a result of the mixture phases since the growth rate of epsilon-Ga2O3 is much higher than that of alpha-Ga2O3. In this HCl-enhanced MOCVD mode, the Cl impurity concentration was almost identical among the investigated samples. On the basis of our density functional theory calculation, we found that the relative energy between beta-, epsilon-, and alpha-Ga2O3 became smaller, thus inducing the phase change by increasing the HCl flow in the reactor. Thus, it is plausible that the HCl acted as a catalyst during the phase transformation process. Furthermore, we revealed the microstructure and the epitaxial relationship between Ga2O3 with different phases and the c-plane sapphire substrates. Our HCl-enhanced MOCVD approach paves the way to achieving highly controllable heteroepitaxy of Ga2O3 films with different phases for device applications.

Effect of Additional Hcl Flow on the Surface Morphology of Gan Grown on Sapphire by Hvpe

Effect of Additional HCl Flow on the Surface Morphology of HVPE GaN on Sapphire

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

Effect of Additional HCl and Substrate Nitridation on GaN Films Grown by HVPE

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

The Growth Of Gan Films On Si Substrates By Hvpe

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD

High Uniform Growth of 4-Inch GaN Wafer Via Flow Field Optimization by HVPE

Effects of the surface stoichiometry of seeds on GaN layer growth by hydride vapour phase epitaxy.

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Effect Of Buffer Layer On The Growth Of Gan Films On Sapphire

HCl Flow-Induced Phase Change of Α-, Β-, and Ε-Ga2o3 Films Grown by MOCVD

Dynamic Scaling Of The Growth Process Deposited On Sapphire Substrates Of Gan Thin Films By Hvpe