Abstract:Due to the large thermal and lattice mismatch between gallium oxide (Ga2O3) and diamond, the resulting residual stress brings high defect densities and susceptibility to cracking on the Ga2O3 epilayer. To balance the stress-strain behavior and eliminate the dislocation defects, this study employed diamond composite substrates which consist of a pre-grown AlN strain interlayer on the surface of the bulk diamond to heteroepitaxy Ga2O3 nanomembranes via pulsed laser deposition (PLD). To achieve an optimal solution of high-quality Ga2O3 thin films, several comparative investigations were proposed and gave a preliminary exploration. Subsequently, spectroscopic ellipsometry (SE), high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), were performed to characterize the physical, chemical, and optical properties. A comprehensive analysis was conducted on the quality of Ga2O3 thin films dependent on the growth processes including oxygen pressure, in-situ annealing treatment, and the “two-step” growth. It demonstrated that high oxygen pressure significantly increased the growth rate of Ga2O3 (∼ 2 times), slightly improved crystallinity and surface morphology (RMS decreased ∼ 2.2 nm), and reduced oxygen vacancy defects (∼ 3%). The additional in-situ annealing process and the “two-step” growth method also brought a bit of thickness increase (∼ 28 nm and ∼ 14 nm, respectively). By in-situ annealing in various stages, 2D and 3D growth modes competition caused Ga2O3 thin films' continuous grain growth and fewer oxygen vacancy defects but presented different variations of surface morphology. On the whole, the “two-step” growth enhancement scheme proves the largest effect on Ga2O3's quality among the designed sets of experiments. Exploring various optimization schemes and proposing a highly reliable growth technology route is of great significance to give impetus to Ga2O3 application in the electric power field. Consequently, for further insight, continuous work will be propelled in the future.

Dynamic Scaling Of The Growth Process Deposited On Sapphire Substrates Of Gan Thin Films By Hvpe

The Growth Of Gan Films On Si Substrates By Hvpe

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Gan Grown on Ain/Sapphire Templates

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

High Uniform Growth of 4-Inch GaN Wafer Via Flow Field Optimization by HVPE

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy

Optimization of Heteroepitaxial Gallium Oxide Thin Films on Diamond Composite Substrates using Pulsed Laser Deposition Method

Epitaxial Lateral Overgrowth Of Gan By Hvpe And Movpe

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD