Abstract:Normally, nitrogen-polar (N-polar) GaN films with better crystalline quality tend to have poor surface morphology, whereas those with good surface morphology suffer from degraded crystalline quality. In this work, we use a two-step high-temperature (HT) growth method to grow N-polar GaN films on vicinal c-plane sapphire substrates by metalorganic chemical vapor deposition, which can effectively solve the irreconcilability between surface morphology and crystalline quality. The GaN film consists of two GaN layers (HT-GaN 1 and HT-GaN 2), which were grown at different growth parameters, respectively. The 300-nm-thick HT-GaN 1 layer was directly grown on the low-temperature GaN buffer layer under the higher V/III ratio and pressure at 1040 degrees C to reduce dislocation density. The 1.7-mu m-thick HT-GaN 2 layer was grown under the lower V/III ratio and pressure to improve surface morphology. Besides, the growth temperature of HT-GaN 2 layer was ramped up to 1070 degrees C to suppress the yellow-band luminescence. Finally, high-quality N-polar GaN films with smooth surface morphology and high crystalline quality were obtained, for which the full-width at half-maximum values of (0002) and (1012) planes X-ray diffraction rocking curves are 131 and 390 arcsec, respectively, the root mean square roughness over an area of 20 x 20 mu m2 is 1.88 nm, and the residual compressive stress is as low as 0.025 GPa. It is reasonably believed that this work provides an effective approach to preparing high-quality N-polar GaN films for the application of N-polar nitride devices.

Effect of Additional HCl Flow on the Surface Morphology of HVPE GaN on Sapphire

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

Effect of Additional Hcl Flow on the Surface Morphology of Gan Grown on Sapphire by Hvpe

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

Effect of Additional HCl and Substrate Nitridation on GaN Films Grown by HVPE

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

Effects of the surface stoichiometry of seeds on GaN layer growth by hydride vapour phase epitaxy.

Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy

Chemical polishing of sapphire for growth of GaN

Growth of High-Quality Nitrogen-Polar GaN Film by Two-Step High-Temperature Method

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy

Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition