Abstract:Based on several extended formulas to determine all frequency- and temperature-dependent distributed parameters of on-chip coupled asymmetrical and symmetrical interconnects on silicon substrates, the electromagnetic-thermal characteristics of interconnects were investigated in detail, including 1) wideband series impedances and shunt conductances, 2) conductive and dielectric attenuation constants of even(c) and odd (pi)-mode, 3) pulse waveform distortion and crosstalk, and 4) average power handling capability (APHC). In these investigations, a set of modified formulas were proposed to determine the mutual conductance and capacitance of asymmetrical configuration. Appropriate thermal models were employed to evaluate the rise in temperature of metal interconnects, where the lateral heat dissipation was taken into account for different spacings between two interconnects. Parametric calculations were performed to capture the hybrid effects of all geometric and physical parameters of metal interconnects, such as line thickness, line conductivity, and silicon conductivity. All numerical examples are believed to be useful in the design of (a)symmetrical interconnects for digital and radio frequency circuits.

Wide-band characterization of average power handling capabilities of some microstrip interconnects on polyimide and polyimide/GaAs substrates

Wideband Average Power Handling Capability of Coupled Microstrips on Polyimide and Polyimide∕gaas Substrates

Finite-Ground Thin-Film Microstrip Interconnects (tfmis) and Their Power Handling Capabilities over Ultra-Wide Frequency Ranges

The Frequency-Dependent Average Power Handling Capability Of Metal-Insulator Semiconductor (Mis) Microstrip Interconnects

Frequency-Dependent Maximum Average Power-Handling Capabilities of Single and Edge-Coupled Microstrip Lines on Low-Temperature Co-Fired Ceramic (ltcc) Substrates

Average Power-Handling Capability Of The Signal Line In Coplanar Waveguides On Polyimide And Gaas Substrates Including The Irregular Line Edge Shape Effects

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

Modeling and Characterization of On‐Chip Interconnects

Breakdown Predictions of Microstrip Interconnects and Coplanar Waveguide-Built Devices in the Presence of HP-EMPs

Parameter Characterization Of Silicon-Based Patterned Shield And Patterned Ground Shield Coplanar Waveguides

Wideband Description of the Finite-Ground Coplanar Waveguide-Type Structures with Discontinuities

Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature

Wide-band Impedance Characteristics of Finite-Ground Uniform and Stepped Coplanar Waveguides

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Average Power Handling Capability of Quarter-Wavelength Microstrip Stepped-Impedance Resonator Bandpass Filter

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Characterization of Average Power Handling Capability of Bandpass Filters Using Planar Half-Wavelength Microstrip Resonators

A Broadband Permeability Measurement of Fetan Lamination Stack by the Shorted Microstrip Line Method

Electrothermal modelling of through silicon via (TSV) interconnects

Sub-THz Interconnect for Planar Chip-to-Chip Communications

Studies on Average Power Handling Capacity of SIW with Heat Transfer Theory