Abstract:To understand and control thermal conductance of interface between metal and semiconductor has now become a crucial task for the thermal design and management of nano-electronic and micro-electronic devices. The interfacial alignments and electronic characteristics of the interfaces between metal and semiconductor are studied using a first-principles calculation based on hybrid density functional theory. The thermal conductance of interfaces between metal and semiconductor were calculated and analyzed using diffuse mismatch model, acoustic mismatch model and nonequilibrium molecular dynamics methods. Especially, according to nonequilibrium molecular dynamics, the values of thermal conductance were obtained to be 32.55 MW m −2 K −1 and 341.87 MW m −2 K −1 at C–Cu and Si–Cu interfaces, respectively. These results of theoretical simulation calculations are basically consistent with the current experimental data, which indicates that phonon–phonon interaction play a more important role than electron–phonon interaction during heat transport. It may be effective way to improve the interfacial thermal conductance through enhancing the interface coupling strength at the metal–semiconductor interface because the strong interfacial scattering plays a role in suppressing in the weaker interface coupling heterostructure, leading to the lower thermal conductance of interfaces. This could provide a beneficial reference for the design of the Schottky diode and thermal management at the interfaces between metal and semiconductor.

The Frequency-Dependent Average Power Handling Capability Of Metal-Insulator Semiconductor (Mis) Microstrip Interconnects

Wide-band characterization of average power handling capabilities of some microstrip interconnects on polyimide and polyimide/GaAs substrates

Frequency-Dependent Maximum Average Power-Handling Capabilities of Single and Edge-Coupled Microstrip Lines on Low-Temperature Co-Fired Ceramic (ltcc) Substrates

Wideband Average Power Handling Capability of Coupled Microstrips on Polyimide and Polyimide∕gaas Substrates

Finite-Ground Thin-Film Microstrip Interconnects (tfmis) and Their Power Handling Capabilities over Ultra-Wide Frequency Ranges

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

The attenuation and slow-wave characteristics of an inverted embedded (IEM) metal-insulator semiconductor (MIS) microstrip line

Average Power Handling Capability of Microstrip Lines Considering Heat Convection and Self-Heating Effects With Temperature-Dependent Resistivity

Average Power Handling Capability of Quarter-Wavelength Microstrip Stepped-Impedance Resonator Bandpass Filter

Average Power-Handling Capability Of The Signal Line In Coplanar Waveguides On Polyimide And Gaas Substrates Including The Irregular Line Edge Shape Effects

Modeling and Characterization of On‐Chip Interconnects

Studies on Average Power Handling Capacity of SIW with Heat Transfer Theory

Power Handling Capability Of Substrate Integrated Waveguide Interconnects And Related Transmission Line Systems

Study on Average Power Handling Capacity of Graphene Nanoribbon Interconnects

Average power handling capability on SiON thin film coplanar waveguide interconnections for MMICs

Compact Modeling for Average Power Handling Capabilities of Symmetric and Asymmetric Striplines

A comparative study of interfacial thermal conductance between metal and semiconductor

Analysis of Signal Propagation on High‐speed Planar Interconnect Systems Based on Full‐wave and Macromodeling Techniques

Near-Field Scanning Based Shielding Effectiveness Analysis of System in Package

Analytical Modeling of Metal-Insulator-Semiconductor Interconnects Using the Energy Based Approach

Analysis of Signal Transmission Efficiency in Semiconductor Interconnect and Proposal of Enhanced Structures