Abstract:Despite silicon carbide’s (SiC’s) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes and thyristors, and Schottky contact-based devices operating at high temperatures. The performance and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate dielectric reliability trade-off due to lower channel mobility as well as SiC–SiO2 barrier lowering due to interface traps; (b) reduction in breakdown field and increased leakage current due to material defects; and (c) increased leakage current in SiC Schottky devices at high temperatures.Although a natural oxide is considered a significant advantage for realizing power MOSFETs and IGBTs in SiC, devices to date have suffered from poor inversion channel mobility. Furthermore, the high interface state density presently found in the SiC–SiO2 system causes the barrier height between SiC and SiO2 to be reduced, resulting in increased carrier injection in the oxide. A survey of alternative dielectrics shows that most suffer from an even smaller conduction band offset at the SiC–dielectric interface than the corresponding Silicon–dielectric interface and have a lower breakdown field strength than SiO2. Thus, an attractive solution to reduce tunneling such as stacked dielectrics is required.In Schottky-based power devices, the reverse leakage currents are dominated by the Schottky barrier height, which is in the 0.7–1.2eV range. Because the Schottky leakage current increases with temperature, the SiC Schottky devices have a reduction in performance at high temperature similar to that of Silcon PN junction-based devices, and they do not have the high temperature performance benefit associated with the wider bandgap of SiC.Defects in contemporary SiC wafers and epitaxial layers have also been shown to reduce critical breakdown electric field, result in higher leakage currents, and degrade the on-state performance of devices. These defects include micropipes, dislocations, grain boundaries and epitaxial defects. Optical observation of PN diodes undergoing on-state degradation shows a simultaneous formation of mobile and propagating crystal stacking faults. These faults nucleate at grain boundaries and permeate throughout the active area of the device, thus degrading device performance after extended operation.

A Study of Oxide Reliability Limitation on Different Field Plate Based Termination Techniques for SiC Power Devices

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

A New Edge Termination Technique for SiC Power Devices

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices

Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices

Oxide Reliability of SiC MOS Devices

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs

Design and Simulation on Improving the Reliability of Gate Oxide in SiC CDMOSFET

Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

Oxide Breakdown Reliability of SiC MOSFET

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS with Different Die Attach Materials under 300°C Power Cycle Stress

Reliability and performance limitations in SiC power devices

Recent Progress in SiC and GaN Power Devices

Termination Design of 6.5kV SiC MOSFET with Epitaxial Current Spreading Layer