Abstract:In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide.

High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

Design of field-plate terminated 4H-SiC Schottky diodes using high-k dielectrics

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Simulation study on 4H–SiC power devices with high-k dielectric FP terminations

Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

Recent Progress in High K Gate Dielectrics

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

High-k dielectrics for 4H-silicon carbide: present status and future perspectives

A Study of Oxide Reliability Limitation on Different Field Plate Based Termination Techniques for SiC Power Devices

High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

Field Plate Engineering for GaN-based Schottky Barrier Diodes

Analysis of trench termination in 4H-nSiC based power devices

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

Ramp Oxide Termination Structure Using High-K Dielectrics for High Voltage Diamond Schottky Diodes

Review and perspective of high-k dielectrics on silicon

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination

Simulation Research of 4H-SiC Double-Trench MOSFET with High-k Gate Dielectric Materials