A New Edge Termination Technique for SiC Power Devices

ST Hu,K Sheng

DOI: https://doi.org/10.1016/j.sse.2004.05.027

2003-01-01

Abstract:In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.

What problem does this paper attempt to address?

A Study of Oxide Reliability Limitation on Different Field Plate Based Termination Techniques for SiC Power Devices

ST Hu,K Sheng

2004-01-01

Abstract:SiC is a promising material for future power semiconductor devices due to its superior material property. As an important edge termination technique for SiC devices, field plate termination techniques have the advantage of being simple with fabrication process and that it avoids defects induced reverse leakage current associated with implantation based JTE terminations. In this paper, various field plate termination techniques are systematically studied and results reveal that severe electric field crowding exits in the oxide at the metal termination, which will potentially cause reliability concern and limit device breakdown voltage. Oxide reliability issue for various field plate edge termination for the first time is explored in detail and new techniques are proposed to minimize field crowding in the dielectric material. Dielectric reliability concerns are alleviated and a relatively high percentage of ideal breakdown voltage is achieved with the proposed termination structure. The proposed structure is simple and can be a promising termination technology for SiC power semiconductor devices.
Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

Woongje Sung,B. Jayant Baliga,Alex Q. Huang

DOI: https://doi.org/10.1109/ted.2016.2532602

2016-01-01

Abstract:This paper reviews the bevel-edge termination techniques for silicon carbide (SiC) power devices, such as bevel junction termination extension (JTE), resistive-bevel termination, bevel-assisted JTE, and positive-bevel termination. The proposed bevel-edge termination techniques significantly reduce the chip size for SiC power devices. PiN diodes and test structures were fabricated to quantify the relative performance of the proposed structures. Quantitative comparison in chip size reduction, process schemes, and future research directions is discussed in detail.
An Effective High-Voltage Termination for Sic Planar Pn Junctions for Use in High-Voltage Devices and Uv Detectors

G Brezeanu,M Badila,P Godignon,J Millan,F Udrea,A Mihaila,G Amaratunga

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1301

2002-01-01

Materials Science Forum

Abstract:The planar edge termination technique with oxide ramp at the periphery of the contact is extended to SiC Ti, Pt and Ni Schottky and pn junction diodes. We have fabricated high voltage 4H-SiC diodes to verify the efficiency of this termination. In addition, we extended the study to the UV detection performances of specifically design Schottky and junction barrier diodes with oxide ramp termination by numerical MEDICI simulation.
Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

M. Brezeanu,M. Badila,G. Brezeanu,F. Udrea,C. Boianceanu,G. A. J. Amaratunga,K. Zekentes

DOI: https://doi.org/10.4028/www.scientific.net/msf.527-529.1087

2006-01-01

Materials Science Forum

Abstract:A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the breakdown voltage for both SiC JBDs and SBDs, obtained by using high-k dielectrics. A study regarding the influence of the dielectric permittivity and thickness on the off-state performances of the diodes is included. It is shown that Si3N4 is to be preferred to SiO2 for the dielectric ramp. Termination efficiencies up to 96% are reported.
Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

Xing Huang,Edward Van Brunt,B. Jayant Baliga,Alex Q. Huang

DOI: https://doi.org/10.1109/led.2012.2215003

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Symmetric blocking power semiconductor switches require positive-bevel edge terminations for the reverse blocking p-n junction. This technique has been extensively applied to silicon wafer-size devices with high current ratings. In this letter, we propose and experimentally demonstrate, for the first time, that an orthogonal positive-bevel termination can be used for the reverse blocking junction of chip-size SiC devices. The edge termination was formed by sawing the SiC wafer with a V-shaped dicing blade. For proof of concept, our experiment was done on a SiC wafer with a 15.8-mu m6.1 x 10(15) cm(-3) p-type epitaxial layer grown on an N+ substrate. The positive-bevel termination resulted in a breakdown voltage of over 1000 V as limited by reach-through breakdown even without removal of damage from the sawing. The leakage current was found to be reduced by two orders of magnitude after reactive ion etching of the SiC bevel surface to remove the sawing damage.
A New Edge Termination Technique for High-Voltage Devices in 4H-Sic–multiple-floating-zone Junction Termination Extension

Woongje Sung,Edward Van Brunt,B. J. Baliga,Alex Q. Huang

DOI: https://doi.org/10.1109/led.2011.2144561

IF: 4.8157

2011-01-01

IEEE Electron Device Letters

Abstract:A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.
Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-Sic High-Voltage Devices

Woongje Sung,Alex Q. Huang,B. Jayant Baliga

DOI: https://doi.org/10.1109/led.2015.2427654

IF: 4.8157

2015-01-01

IEEE Electron Device Letters

Abstract:A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (~95% of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.
Study on Junction Termination Etching Techniques for 4H-SiC Schottky Barrier Diode

Jiaming WANG,Yingxi NIU,Ziwei PEI,Miao ZHAO,Fei YANG,Junjie LI,Junfeng LI,Jing ZHANG,Hengyu XU,Zhi JIN,Xinyu LIU

DOI: https://doi.org/10.14171/j.2095-5944.sg.2016.06.003

2016-01-01

Abstract:Silicon carbide (SiC) materials are wide used in high temperature, high voltage and high power devices. Junction terminal technology directly influences the withstand voltage properties of high-voltage SiC Schottky barrier diodes, and etching technique is a key technology for making junction terminal structure. Different etching gas systems such as SF6/ O2 / Ar, BCl3 / Cl2 / Ar and CF4/ O2 / Ar are used to etch SiC materials. And through a series of technology optimization, junction terminal technology for dry etching of SiC was developed, in the latter part, hard tilt masking is combined with CF4 / O2 / Ar gases. The technology has a positive effect on the field of improving breakdown voltage for SiC Schottky barrier diode.
Analysis of Novel Packaging Techniques for High Power Electronics in SiC

S. J. Rashid,C. M. Johnson,F. Udrea,A. Mihaila,G. A. J. Amaratunga,R. K. Malhan

DOI: https://doi.org/10.4028/www.scientific.net/msf.556-557.971

2007-01-01

Materials Science Forum

Abstract:A novel high temperature wire bondless packaging technique is numerically investigated in this paper. Extraction of device effective resistivity with temperature from numerical characteristics of 1.2kV 4H-SiC MOSFETs at a current density of 400A/cm2 have demonstrated a T−2 temperature dependence. Electro-thermal finite element analysis (FEA) of 1.2kV 4H-SiC MOSFETs sandwiched between two etched direct-bonded-copper substrate tiles has been performed. The thermal resistance of the ceramic sandwich package shows a 75% reduction in thermal resistance compared to conventional wire bonded assemblies. Mechanical analysis of the assembly has been used to investigate the residual stresses in the SiC dies at room temperature, which are then alleviated at higher temperatures during device operation. Mismatch of the expansion coefficients of the auxiliary materials in the assembly result in elevated stresses at full load operation, however these are well below the tensile strength of the respective materials and hence do not compromise the mechanical integrity of the package.
Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

A. Nawawi,K. J. Tseng,Rusli,G. A. J. Amaratunga,H. Umezawa,S. Shikata

DOI: https://doi.org/10.1016/j.diamond.2013.04.009

IF: 3.806

2013-01-01

Diamond and Related Materials

Abstract:In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide.
Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

Hengyu Wang,Jue Wang,Li Liu,Na Ren,Jiupeng Wu,Ce Wang,Shu Yang,Kuang Sheng

DOI: https://doi.org/10.1109/jestpe.2019.2920927

IF: 5.462

2019-09-01

IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

engineering, electrical & electronic
High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

Qi Zhu

DOI: https://doi.org/10.1109/COMPEL52896.2023.10221057

2023-06-25

Abstract:The conventional trench termination for the 4HSiC sidewall-implanted Super Junction device has relatively low avalanche capability and the devices can fail destructively under abnormal operating conditions. In this paper, a novel high-k dielectric assisted trench termination is proposed. The high-k dielectric TiO2 is incorporated into the SiO2-filled trench. TCAD simulations are conducted to validate the efficacy of the proposed termination. The results show that with the proposed termination, the peak electric field is pushed to the edge of the TiO2 region, preventing breakdown at the corners of the active region edge; at the same time, the leakage current flows uniformly from the active region, thus improving the avalanche current; in addition, the addition of TiO2 to the terminator does not reduce the breakdown voltage. Moreover, the dimensions of the TiO2 are optimized in terms of the maximum current density. By taking the dielectric strength into consideration, the optimum depth and length of the TiO2 region are found to be 0.6μm and 2μm, respectively.

Engineering,Materials Science,Physics
Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices

Yong Liu,Wentao Yang,Hao Feng,Yuichi Onozawa,Setsuko Wakimoto,Naoto Fujishima,Johnny K.O. Sin

DOI: https://doi.org/10.1109/ispsd.2019.8757620

2019-05-01

Abstract:Trench field plate engineering for high efficient edge termination of 1200 V-class SiC devices is proposed and experimentally demonstrated. The structure features a deep trench filled with benzocyclobutene (BCB) dielectric, and a U-shaped field plate is incorporated in the deep trench. The deep trench extends through the epitaxial layer into the substrate to eliminate the negative effects of the microtrench on breakdown voltage. The U-shaped field plate modulates the electric field distribution to prevent premature breakdown at the interface between the P-base and trench. The SiC outside the trench is diced away to reduce the peak electric field at the edge of the field plate by spreading the electrostatic potential both horizontally and vertically. The trench field plate edge termination structure is implemented by integrating with a PiN diode. Experimental results show that the structure achieves a breakdown voltage of 1380 V, which is approximately 100% of the ideal planar junction breakdown voltage of the PiN diode. The fabricated edge termination structure has an ultra-short width of $33 oldsymbol{mu} mathbf{m}$. Compared with conventional junction termination extension structures used in 1200 V-class SiC devices, the width of the proposed structure is approximately 75% shorter.
A Robust and Area-Efficient Guard Ring Edge Termination Technique for 4H-Sic Power MOSFETs

Xiaochuan Deng,Yuanxu Guo,Tianxiang Dai,Chengzhan Li,Ximing Chen,Wanjun Chen,Yourun Zhang,Bo Zhang

DOI: https://doi.org/10.1016/j.mssp.2017.06.019

IF: 4.1

2017-01-01

Materials Science in Semiconductor Processing

Abstract:A robust and area efficient adjusted multi-section guard rings (AMS) edge termination structure is employed to a 4H-SiC power MOSFET device rated at 1.7kV and fabricated without extra process steps or masks in this paper. The lightly doped p-type guard ring with adjusted multi-section spacing, which is similar with varied lateral doping technology widely used in silicon edge termination, creates a smoother and more uniform surface electric field distribution across all rings, resulting in a higher reverse blocking voltage with minimal edge termination area. The fabricated AMS-MOSFET devices with an active area of 2.5mm2 have reverse blocking voltage up to 2.5kV at room temperature. Compared to the conventional SiC MOSFETs with the uniform ring spacing, the AMS-MOSFET with the same edge termination area shows more than a 25% increase in the reverse blocking voltage. Furthermore, high-temperature reverse bias stress test is performed to verify junction and termination robustness of the AMS-MOSFET device. A small variation in the reverse blocking voltage and drain-source leakage current are achieved under 168h high-temperature reverse bias stress with the drain bias of 1360V at ambient temperature of 175°C, which suggests an expected robustness in high power application for the fabricated SiC MOSFET with the AMS structure.
Analysis of trench termination in 4H-nSiC based power devices

Jyoti Verma,Sangeeta Pant,Anuj Kumar,Bhupendra Kumar Jangir,Jasvir Dalal,Mangey Ram

DOI: https://doi.org/10.1016/j.matpr.2021.02.226

2021-01-01

Materials Today: Proceedings

Abstract:Power generation and its distribution are highly required to support the health-care, comfort, and transportation of next generation. Silicon-based power devices have reached their theoretical limit. Alternative solution is suggested by introduction of wide bandgap semiconductors, i.e., SiC, GaN, etc. Maturity in crystal quality and availability in the market makes SiC a promising candidate to adopt in fabrication of power devices. However, their full potential is inhibited by lack of efficient trench termination technique. This work reports trench terminated 4H-nSiC based Schottky barrier diode structure using Al2O3 as a dielctric material. ATLAS device simulator of Silvaco software is used to simulate the device structures. Various models like SRH and Auger recombination, Fermi Dirac, parallel and concentration field dependent mobility, incomplete ionization, Selberherr impact ionization, etc. have been included. Due to high potential and electric field crowding at edges of unterminated schottky barrier diodes, their is predicted as ~ 350 V. However, the potential and therefore the electric field at edges of SBD has been minimized by forming a trench at its edges. The trench in the designed structure is filled with SiO2, Polyimide and with Al2O3. The high permittivty of dielctric material filled in the trench leads to enhancement in breakdown voltage of the device to ~ 1875 V.
Sic Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination And Junction Termination Extension

xing huang,b jayant baliga,alex q huang,a v suvorov,craig capell,lin cheng,anant agarwal

DOI: https://doi.org/10.1109/ISPSD.2013.6694475

2013-01-01

Abstract:Symmetric blocking power semiconductor switches require two edge terminations, one for the reverse blocking junction and the other one for the forward blocking junction. In this work, we demonstrated 1100V SiC symmetric blocking edge terminations using orthogonal positive bevel (OPB) termination and a one-zone Junction Termination Extension (JTE). The OPB was formed by orthogonally sawing 45 degrees V-shape trenches into the SiC wafer with a diamond-coated dicing blade. The surface damage was then repaired with dry-etch in SF6/O-2 plasma, which reduced the leakage current by around two orders of magnitude. As limited by field reach-through, both the OPB and the JTE terminations show breakdown voltage of 1100V. The P+P-N+ diodes fabricated on the same wafer with the OPB termination showed 1610V avalanche breakdown which was around 83% of ideal value.
Recent Progress in SiC and GaN Power Devices

Kuang Sheng,Shu Yang,Qing Guo,Hongyi Xu

DOI: https://doi.org/10.1149/08007.0037ecst

2017-01-01

Abstract:Wide bandgap SiC and GaN power devices are attractive for next-generation power electronic systems with increased efficiency and power density. In this paper, we review recent progress in SiC and GaN power devices, including the following. (1) Interface optimization techniques for SiC MOSFETs (e.g. NO/N2O annealing, P incorporation, metal interfacial-layer, high-k dielectric deposition, etc.) will be discussed. (2) Longterm reliability of SiC MOSFETs with special focus on time-dependent dielectric breakdown (TDDB) will be presented. (3) We will introduce our latest progress in the development of superjunction SiC devices, which can break the fundamental limit of the conventional unipolar devices. (4) In GaN-based lateral power devices, the 2DEG channel is an inherent normally-on channel. To achieve fail-safe operation and simpler gate drive circuit, normally-off device techniques will be introduced and compared.
Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors

Hu Long,Hongyi Xu,Hengyu Wang,Na Ren,Qing Guo,Kuang Sheng

DOI: https://doi.org/10.1109/ted.2021.3053187

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:For the termination in high-voltage SiC thyristor, this article proposes a single-mask implantation-free solution named aperture density modulation technique. Using this technique, the etching profile on the epitaxial layer can be controlled by the aperture layout on the mask. Thus, it can directly form the smoothly tapered junction termination extension with customizable slope profile. The experiments confirm this control ability on profiles with the extension length from 200 to 400 μm. The fabricated devices with the blocking voltage near 8 kV (~80%) demonstrate the feasibility as a termination technique. The numerical simulations present the potential to maintain this breakdown voltage within 120 μm. Therefore, a low-cost solution for high-voltage termination in SiC bipolar devices is expected using this technique.
Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

Hengyu Wang,Ce Wang,Baozhu Wang,Hu Long,Kuang Sheng

DOI: https://doi.org/10.1109/led.2020.3046281

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:Termination design for 4H-SiC super-junction devices based on “trench-etching and implantation” technology, has been discussed through 3D numeric simulations and experiments. It is found that the existing design concept of super-junction termination extension (SJTE) structure is no longer capable of blocking high voltage due to the hole accumulation on the trench sidewall. In order to provide sufficient protection for the device edge, a novel device structure, i.e., hybrid termination of wide trench and SJTE (WT-SJTE), is proposed. With such WT-SJTE structure, the simulated device breakdown voltage can be improved from 700V to 800V. Furthermore, through the narrow termination mesa design, as predicted by numeric simulations, a noticeable improvement were measured, and a breakdown voltage of 960V was experimentally demonstrated. These results show the effectiveness of the WT-SJTE with such narrow termination mesa design.
Design of edge termination for GaN power Schottky diodes

J. R. Laroche,F. Ren,K. W. Baik,S. J. Pearton,B. S. Shelton,B. Peres

DOI: https://doi.org/10.1007/s11664-005-0113-6

IF: 2.1

2005-04-01

Journal of Electronic Materials

Abstract:The GaN Schottky diodes capable of operating in the 300–700-V range with low turn-on voltage (0.7 V) and forward conduction currents of at least 10 A at 1.4 V (with corresponding forward current density of 500 A/cm2) are attractive for applications ranging from power distribution in electric/hybrid electric vehicles to power management in spacecraft and geothermal, deep-well drilling telemetry. A key requirement is the need for edge-termination design to prevent premature breakdown because of field crowding at the edge of the depletion region. We describe the simulation of structures incorporating various kinds of edge termination, including dielectric overlap and ion-implanted guard rings. Dielectric overlap using 5-µm termination of 0.1–0.2-µm-thick SiO2 increases the breakdown voltage of quasi-vertical diodes with 3-µm GaN epi thickness by a factor of ∼2.7. The use of even one p-type guard ring produces about the same benefit as the optimized dielectric overlap termination.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied

A New Edge Termination Technique for SiC Power Devices

A Study of Oxide Reliability Limitation on Different Field Plate Based Termination Techniques for SiC Power Devices

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

An Effective High-Voltage Termination for Sic Planar Pn Junctions for Use in High-Voltage Devices and Uv Detectors

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

A New Edge Termination Technique for High-Voltage Devices in 4H-Sic–multiple-floating-zone Junction Termination Extension

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-Sic High-Voltage Devices

Study on Junction Termination Etching Techniques for 4H-SiC Schottky Barrier Diode

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices

A Robust and Area-Efficient Guard Ring Edge Termination Technique for 4H-Sic Power MOSFETs

Analysis of trench termination in 4H-nSiC based power devices

Sic Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination And Junction Termination Extension

Recent Progress in SiC and GaN Power Devices

Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors

Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

Design of edge termination for GaN power Schottky diodes