Abstract:The reliability and durability of integrated circuits (ICs), present in almost every electronic system, from consumer electronics to the automotive or aerospace industries, have been and will continue to be critical concerns for IC chip makers, especially in scaled nanometer technologies. In this context, ICs are expected to deliver optimal performance and reliability throughout their projected lifetime. However, real-time reliability assessment and remaining lifetime projections during in-field IC operation remain unknown due to the absence of trustworthy on-chip reliability monitors. The integration of such on-chip monitors has recently gained significant importance because they can provide real-time IC reliability extraction by exploiting the fundamental physics of two of the major reliability degradation phenomena: bias temperature instability (BTI) and hot carrier degradation (HCD). In this work, we present an extensive study of ring oscillator (RO)-based degradation and annealing monitors designed on our latest 28 nm versatile array chip. This test vehicle, along with a dedicated test setup, enabled the reliable statistical characterization of BTI- and HCD-stressed as well as annealed RO monitor circuits. The versatility of the test vehicle presented in this work permits the execution of accelerated degradation tests together with annealing experiments conducted on RO-based reliability monitor circuits. From these experiments, we have constructed precise annealing maps that provide detailed insights into the annealing behavior of our monitors as a function of temperature and time, ultimately revealing the usage history of the IC.

A comprehensive NBTI degradation model based on ring oscillator circuit

A Reliability Model for CMOS Circuit Based on Device Degradation

Modeling Analysis of BTI-driven degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

Modeling of PMOS NBTI Effect Considering Temperature Variation

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Optimal Vdd Assessment Of Cmos Technology Considering Circuit Reliability Tradeoffs

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Model of NBTI combined with mobility degradation

Characterization of Reliabilities of 22 Nm UTBB FDSOI Ring Oscillators

An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method

Optimal V<inf>DD</inf> Assessment of CMOS Technology Considering Circuit Reliability Tradeoffs

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

A Ring Oscillator Based Reliability Structure for NBTI & PBTI Measurement

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

A Novel Gate-Level Nbti Delay Degradation Model With Stacking Effect

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

A Ring Oscillator based reliability structure for duty-cycle measurement under BTI stresses