Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

A Ring Oscillator Based Reliability Structure for NBTI & PBTI Measurement

A Ring Oscillator based reliability structure for duty-cycle measurement under BTI stresses

A monitoring circuit for NBTI degradation at 65nm technology node

The beat-frequency circuit for monitoring duty-cycle shift based on BTI effect

A comprehensive NBTI degradation model based on ring oscillator circuit

Circuits Design for Contactless Testing of Nano-Scale CMOS Devices and Circuits

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Assessment of Circuit Optimization Techniques Under NBTI

Modeling Analysis of BTI-driven degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

LF-OCT Based Non Destructive Testing for IGBT Module

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

Statistical Observations of Three Co-Existing NBTI Behaviors in 28 Nm HKMG by On-Chip Monitor with Less Recovery Impact.

A Framework for Estimating NBTI Degradation of Microarchitectural Components

An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method

Understanding NBTI-induced Dynamic Variability in the Nano-Reliability Era: from Devices to Circuits

An Efficient Test Structure for Interface Trap Characterization under BTI Stresses

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.