Abstract:GaN-based high electron mobility transistors (HEMTs) have exhibited great application prospects in power and radio frequency devices, thanks to the superior properties of GaN. Despite the significant commercialization progress, the reliability of GaN-based HEMTs remains a challenge. This work experimentally investigates the time-dependent degradation of Mg-doped GaN/AlN superlattice HEMTs under both OFF-state and SEMI-ON-state bias conditions and proposes that GaN/AlN superlattices as a barrier can solve the Vth instability issues of GaN HEMTs under OFF-state and SEMI-ON-state bias conditions. On the one hand, in the SEMI-ON-state, the hot electron effect leads to the degradation of Ig, gm,max, and Id,sat to varying degrees. However, the as-prepared GaN-based HEMTs exhibit excellent Vth stability (almost no change) under hot electron injection, on the account of the excellent two-dimensional electron gas confinement in the GaN/AlN superlattice structure. On the other hand, in the OFF-state, positive Vth shift (about 0.12 V) is induced by the hole emission in the GaN/AlN superlattice structure under reverse bias stress. In addition, the stress-induced destruction of MgO gate dielectric gives rise to the gate leakage, which increases by 2 orders of magnitude and triggers an irreversible degradation (about 10%) of the gm,max. These results are expected to provide a solution to the Vth instability of GaN HEMTs.

ON-state breakdown mechanism of GaN power HEMTs

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs

Over 1200 V Normally-OFF P-Nio Gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

Hot Electron Assisted Vertical Leakage/breakdown in AlGaN/GaN Heterostructures on Si Substrates

Demonstration and Thermal Reliability of an E-Mode P-Type Hexagonal Boron Nitride Gate AlGaN/GaN HEMT

Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Study of 1500V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Heavy-Ion Radiation Effects in AlGaN/GaN High Electron Mobility Transistors

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs