Abstract:Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested. © 2010 Elsevier B.V. All rights reserved.

A Study Of Gan-Based Led Structure Etching Using Inductively Coupled Plasma

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

GaN-based Blue LEDs with Microstructure on P-Gan Surface Formed by Inductively Coupled Plasma Etching

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Control of Inductively Coupled Plasma Etching GaN Sidewall Profiles and Etch Rate

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Characteristics of N-Gan after ICP Etching

Study on ICP Etching Induced Damage in P-Gan

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching

Characteristics of GaN Thin Films by Inductively Coupled Plasma Etching with Cl2/BCl3 and Cl2/Ar

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Improved Light Extraction of Gan-Based Light-Emitting Diodes with Surface-Patterned Ito

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Selective etching of GaN/ AlGaN by Inductively coupled plasma

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Nonselective Etching of GaN/AlGaN Heterostructures by Cl2/Ar/BCl3 Inductively Coupled Plasmas