Abstract:Light emitting diodes (LEDs) based on indium gallium nitride (InGaN) have been used widely in lighting applications and have shown great potential with high wall-plug efficiency and low manufacturing cost. However, one of the roadblocks in achieving higher light-extraction efficiency is total internal reflection, which prevents a majority of the photons from being extracted from the LEDs.The objective of this paper is to investigate measures for improving LED chip efficiency. Here, a high efficiency LED structure has been theoretically demonstrated using an infiltrated opal layer. A layer of indium-tin oxide (ITO) infiltrated opals was deposited on the surface of the LED chips as the light extraction layer in order to enhance the light extraction efficiency. Opals of similar radius periodically arranged on the structure will work as a rough surface. By enhancing the light extraction angle, the spontaneous emission from the active region can be emitted vertically. At the same time, opals with different radius and different refractive indexes are also studied. ITO, as the infiltration, is used to provide good lateral current spreading.The plane wave expansion (PWE), finite difference time domain,(FDTD), and rigorous coupled wave analysis (RCWA) methods are used to calculate the energy band structures and the extraction efficiency of the infiltrated opals layer. The scanning method and the Monte Carlo method are employed to optimize the structural parameters of the infiltrated opal layer. The infiltrated opals layer on the LED shows a high light extraction efficiency of over 60%.

Improved Light Extraction of Gan-Based Light-Emitting Diodes with Surface-Patterned Ito

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Enhancement of Light Extraction from Microstructured GaN-Based Light Emitting Diodes by Technique of Nanoimprint

Enhancement of Light Extraction of GaN Light-Emitting Diode Using Opals Layer

Improvement of Light Extraction from Patterned Polymer Encapsulated Gan-Based Flip-Chip Light-Emitting Diodes by Imprinting

Light Extraction Improvement of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings

Improvement of Surface Light Extraction from Flip‐chip GaN‐based LED by Embossing of Thermosetting Polymers

Light Extraction Improvement of InGaN Light-Emitting Diodes with Large-Area Highly Ordered ITO Nanobowls Photonic Crystal Via Self-Assembled Nanosphere Lithography

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

High-output power GaN-LED based on surface plasmon enhancement

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Light Extraction Enhancement of GaN LEDs by Hybrid ZnO Micro-Cylinders and Nanorods Array

Effect of ITO Interface Modulation Layer on the Performances of LEDs with Ga-doped ZnO Electrode

Light Extraction Efficiency Enhancement of GaN-based Light Emitting Diodes by a ZnO Current Spreading Layer