Abstract:Gallium nitride (GaN), aluminum nitride, indium nitride (InN), and their alloys have long been considered as promising materials for device applications. Recently, growth of high quality InN as well as InxGa1−xN have been demonstrated. In particular, progress in the manufacturing of very high quality, single-crystal InN thin films has opened up a new challenging research avenue in the Ill-nitride semiconductors. In contrast to earlier beliefs, it has recently been found that InN has a relatively narrow bandgap, only ∼0.8 eV. Consequently, it is expected that InN has the smallest effective mass of the III-N semiconductors. As a result, very high electron mobility and a very large saturation velocity are expected. Recent single-particle Raman scattering, supported by ensemble Monte Carlo simulations suggest that steady velocities of the order of 5 × 107 cm/s can be found in high quality, single crystal wurtzite films of InN [1]. Here, we report on these calculations for the transport and properties of the non-equilibrium longitudinal optical phonons. We use a high quality, single-crystal wurtzite InN film grown on GaN and study the transport with picosecond/subpicosecond Raman spectroscopy. The built-in polarization and piezoelectric stress lead to an electric field of ∼80 kV/cm in the sample, which is oriented in the growth direction. From the Raman data [1], we can determine not only the average velocities (the drift velocity), but also the distribution function of the carriers along the field direction.

Hole Mobility in Wurtzite Inn

Effects of Dislocations on Electron Transport in Wurtzite InN

Transport and mobility properties of wurtzite InN and GaN

Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain

Hole Density And Anisotropic Mobility Of Mg-Doped Inn From The Analysis Of Lo Phonon-Hole Plasmon Properties

Hole Mobility Enhancement Mechanism of Wurtzite GaN/AlN Heterojunction Quantum Well Under Tensile and Compressive Stresses

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Hole Mobility in Mg-Doped P-Type Inn Films

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Hole Transport and Carrier Lifetime in InN Epilayers

Influence of Strain on the Band Gap Energy of Wurtzite InN

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Donor and Acceptor Concentrations in Degenerate InN

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Temperature-Dependent Optical Properties of Wurtzite Inn

Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

Hole Transport Assisted by the Piezoelectric Field in In0.4Ga0.6N/GaN Quantum Wells under Electrical Injection

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy