Transient S-parameters of Millimeter-Wave MEMS Switch

LIAO Xiao-ping,XIAO Jian-bin
DOI: https://doi.org/10.3788/ope.20111903.0593
2011-01-01
Abstract:The transient S-parameters of a capacitive shunt and electrostatically actuated millimetre-wave switch were researched.The transient change of these parameters during switching in the gap between switch beam and dielectric layer was derived by a one-dimension mechanical dynamic model from a published paper.Then,the transient change in the gap was used for simulating the transient S-parameters during switching in HFSS software.Finally,this method was applied to a specific switch.Obtained results show that the inserting loss S21 decreases slowly until the end of the pull-in process(from steady value-0.20 dB in Up-state to-1.02 dB over 9.11 μs,97% of the pull-in time),and it increases quickly to nearly the ultimate value at the beginning of the release process(from steady value-20.1 dB in down-state to-1.16 dB over 1.09 μs,5.5% of the release time).The transition time from a passing RF signal to a blocking RF signal is about the time of pull-in,and the transition time from a blocking RF signal to a passing RF signal is one order of magnitude less than the releasing time.
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