Abstract:A dc 6GHz single-pole double-throw (SPDT) switching circuit that employs lateral metal-contact micromachined switches is investigated. The lateral metal-contact switch consists of a set of quasi-finite ground coplanar waveguide (FGCPW) transmission lines and a high-aspect-ratio cantilever beam. A single-pole single-throw (SPST) lateral micromachined switch has an insertion loss of 0.08dB and a return loss of 32dB at 5GHz. The isolation is 32dB at 5GHz. The measured insertion loss of the SPDT switching circuit is below 0.75dB, whereas the return loss is higher than 19dB at 5GHz. The isolation at 5GHz is 33dB. Pull-in voltage of the switch is 23.3V and switching time is 35μs. The size of the SPDT switching circuit is 1.2mm×1.5mm. A main advantage of this circuit structure is simple fabrication process with high yield (>90%) based on the deep reactive ion etching (DRIE) technique of silicon-on-insulator (SOI) wafer and shadow mask technology.

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