Abstract:AbstractTerahertz photonic single‐pole double‐throw (SPDT) switches, which facilitate on‐chip channel control and signal routing, serve as the key components of future terahertz communication and sensing systems. However, broadband and low‐loss on‐chip photonic SPDT switches still present a formidable challenge due to the restricted capability of manipulating terahertz waves in photonic circuits. Here, a non‐Hermitian loss‐driven solution is proposed for achieving broadband and low‐loss terahertz on‐chip photonic SPDT switches. As proof of concept, an all‐silicon terahertz SPDT switching chip is experimentally demonstrated around the center frequency of 125 GHz with a relative bandwidth of 7.2%. The two paths are driven by external optical pumping and evolve adiabatically around an exceptional point (EP) in the unbroken and broken PT‐symmetric phases. Interestingly, the strong non‐Hermitian loss instead enforces the photonic modes to the low‐loss energy level and thereby keeps the switch working at the low‐loss transmission status. As a result, the minimum optical powers require for the ultrafast terahertz communications are only −2 and 1 dBm. Both channels of the SPDT switch support on‐chip 16‐QAM streams with a 36‐Gbit s−1 data rate. The design as a basic building block is anticipated for a myriad of on‐chip applications, including 6G communications, detection, and sensing.

A Single-Pole Double-Throw (SPDT) Circuit Using Lateral Metal-Contact Micromachined Switches

A Low-Supply-voltage High-Power-handling Stacked SPDT Switch Based on Feedforward Capacitors.

The Design of a 57-65Ghz SPDT Switch with LC Resonant Techniques in 40 Nm CMOS Process

A DC-50 GHz SPDT Switch with 1.5-dB Insertion Loss and 35-dB Isolation in 65-nm CMOS

Analysis and design of 60-GHz SPDT switch in 130-nm CMOS

Non‐Hermitian Loss‐driven Broadband Low‐Loss On‐chip Terahertz Photonic SPDT Switch

A Design of V-band Reconfigurable SPDT Switch/Power Divider Based on Slotted SIW

A Broadband Millimeter-Wave Single-Pole Double-Throw Switch Based on Reduced-Size Transmission Line

A Sub-6G SP32T Single-Chip Switch with Nanosecond Switching Speed for 5G Applications in 0.25 Μm GaAs Technology

A CMOS SPDT RF Switch with 68 Db Isolation and 1.0 Db Loss Feathering Switched Resonance Network for MIMO Applications

X‐band high isolation single pole double throw switch based on resonant concept

A High-Linearity SP12T RF MEMS Switch Using Parallel Dual-Cantilevers for 5G and Beyond Applications

Comparative Design of 28 GHz SPDT Switches with GaAs Passive Phemts and Diodes

Design and Analysis of a Lateral Lateral DC-Contact MEMS RF Switch with High Performance

Design of K/Ka-band Passive HEMT SPDT Switches with High Isolation

A 68-Db Isolation 1.0-Db Loss Compact CMOS SPDT RF Switch Utilizing Switched Resonance Network

Design of Low Loss Ka-Band SPDT Switch Based on AlGaN/GaN HEMT Technology

Study on opto-thermal drive micro-switch fabricated based on LIGA technology

A Low-Voltage Lateral MEMS Switch with High RF Performance

Low-voltage Micromachining-Based Scalable Optical Switch

A DC-10GHz SPDT RF Switch with Bulk Self-Biasing Technique in 0.25µm BiCMOS Process