Design of K/Ka-band Passive HEMT SPDT Switches with High Isolation

Liang Zhang,Xu Cheng,Xianjin Deng,Xinxin Li
DOI: https://doi.org/10.1109/cstic.2017.7919890
2017-01-01
Abstract:In this paper, high isolation K/Ka band monolithic microwave integrated circuit (MMIC) single pole double throw (SPDT) switches with different topologies are proposed and discussed. By using a 0.07 μm GaAs high electron mobility transistor (HEMT) process, the shunt type and series-shunt type of passive HEMT SPDT switches are designed and compared. In 24~27GHz, both switches demonstrate an isolation better than 39dB. The shunt type of switch demonstrates an insertion loss less than 1.5dB and the series-shunt type of switch less than 2dB. With a compact chip size smaller than 1.5*2 mm 2 , the designed switches can be used to form the MMIC T/R systems in the future.
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