Abstract:Plasma etching with high selectivity and anisotropy for 20 nm poly-Si gate patterning on EOT of 1.4 nm gate oxynitride is developed in a Cl2/HBr/O2 gas mixture successfully. Direct write e-beam lithography is used for an SAL601 chemically amplified negative resist pattern. Using a combination of resist ashing and TEOS hard mask trimming process, sub-25 nm TEOS SiO2 mask patterns are obtained in the control. Various gas mixtures based on Cl2, HBr, and O2 have been used to study the etching characteristics of poly-Si on EOT of 1.4 nm gate oxynitride. The O2 content as well as HBr are very sensitive to etch rate, selectivity, and the protection of the sidewalls of polysilicon, owing to SiO2-like film, SiOxBry, formed on the etched surface confirmed by x-ray photoelectron spectroscopy. And the ratio of Cl2/HBr/O2 in gas mixture is also tightly related to the etching profile. Using a four-step etching process under optimum conditions the selectivity of poly-Si to oxide is much higher than 500:1, in fact, after polysilicon etching the net deposition of oxide is observed, and no damage on the active area beside the gates for EOT of 1.4 nm gate oxide is observed, too. The etching profile of the 20 nm poly-Si gate pattern is perfectly vertical and an overall narrowing by an estimated 5 nm is observed for oxide masked poly-Si gate etching. The possible mechanism is discussed. This etching process combined with resist ashing and the TEOS hard mask trimming process are implemented successfully to the fabrication of high performance 36 nm gate length complementary metal–oxide–semiconductor (CMOS) devices and 42 nm gate length 32 frequency dividers with 57 stage/201 stage CMOS ring oscillators embedded, the EOT of gate oxynitrid is 1.4 nm, and very good results are obtained.

Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

Optimization of Plasma Etching of Sio2 As Hard Mask for Hgcdte Dry Etching

Study on Mask Technology of HgCdTe Etched by Inductively Coupled Plasma Dry Etching

Graphene Masks As Passivation Layers in the Electrochemical Etching of Silicon

A Junction-Level Optoelectronic Characterization of Etching-Induced Damage for Third-Generation HgCdTe Infrared Focal-Plane Array Photodetectors

Microscale pattern etch of 4H–SiC by inductively coupled plasma

A Study Of Hg1-Xcdxte Surfaces Processed Using Inductively Coupled Plasma With Ch4/H-2/N-2/Ar Mixture

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Comprehensive Study of Sf6/O-2 Plasma Etching for Mc-Silicon Solar Cells

A Study of High Aspect Ratio Si Trench in Cycle Mode Etching with Mask no Loss

Effects of mask characteristics on InP etched- facets by using inductively coupled plasma dry etching

Wafer level bulk titanium ICP etching using SU8 as an etching mask

Etching Quartz with Inductively Coupled Plasma Etching Equipment

Self-Assembled Monolayer Islands Masked Chemical Etching for Broad-Band Antireflective Silicon Surfaces

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask

Highly Selective Etch of Silicon Dioxide with Tungsten Hard Mask Deposited by PVD Process

20 Nm Polysilicon Gate Patterning and Application in 36 Nm Complementary Metal–oxide–semiconductor Devices

The Study on the Profile of HgCdTe Micro-mesa Arrays Isolated by Dry-etch Process

Wet Scandium Etching for hard mask formation on a silicon substrate