HgCdTe photodiode arrays passivated by MBE in-situ grown CdTe film
Zhen-Hua YE,Jian HUANG,Wen-Ting YIN,Wei-Da HU,Jing-Wen FENG,Lu CHEN,Qin-Jun LIAO,Hong-Lei CHEN,Chun LIN,Xiao-Ning HU,Rui-Jun DING,Li HE
DOI: https://doi.org/10.3724/sp.j.1010.2011.00495
2011-01-01
JOURNAL OF INFRARED AND MILLIMETER WAVES
Abstract:The results of HgCdTe long-wavelength infrared n(+) -on-p planar photodiode arrays passivated by molecular beam epitaxy ( MBE) in-situ grown CdTe film were presented in this paper. By mercury-vacancy p-type annealing, ion-implantation window exposure, ZnS ion-implantation barrier layer deposition, B+ -implantation, ion-implantation barrier layer removal, ZnS dielectric film deposition, metallization and indium-bump arrays fabrication, HgCdTe long-wavelength infrared n(+) -on-p planar photodiode arrays using in-situ CdTe passivation was achieved from a Hg1-xCdxTe film covered with a layer of MBE in-situ grown CdTe film. Zero bias dynamic resistances of HgCdTe photodiode arrays using in-situ CdTe passivation were improved 1 similar to 2 times higher than those of non-in-situ CdTe passivation processed one, and the maximum dynamic resistances near small reverse biases were even increased by a factor of 30 similar to 40. Since their current-voltage curves were all measured at 78K, it is obvious that in-situ CdTe passivation was beneficial to suppress dark current of n(+) -on-p planar photodiode by optimizing the interface between the HgCdTe detector and CdTe passivation layer, and then to enhance the performance of long-wavelength infrared photodiode arrays operating at small reverse biases.