Study of dislocation density in MBE HgCdTe epilayers

Meifang Yu,Jianrong Yang,Shanli Wang,Xinqiang Chen,Yimin Qiao,Yan Wu.,Li He
1999-01-01
Abstract:The results of dislocation density investigation in HgCdTe epilayers grown on lattice mismatched GaAs by molecular beam epitaxy are described. The dislocation density in CdTe buffer layers and HgCdTe epilayers, its depth profile as well as the correlation with the process conditions were studied by using the standard etch-pits density (EPD) detection technique, double X-ray diffraction and transmission electron microscopy. It is found that a thermal annealing process is very effective in reducing dislocations in HgCdTe.
What problem does this paper attempt to address?