Abstract:InxGa1-xAs/GaAs strained-layer structures containing four single quantum wells (SSQWs) were grown by molecular beam epitaxy on a (001) semi-insulating GaAs substrate with In contents of x = 0.09 and x = 0.16. The structures contained four InxGa1-xAs quantum wells with well width and growth sequence given by 20, 40, 80 and 160 angstrom and were separated by 500 angstrom GaAs layers. The optical and structural properties of the SSQW samples have been analysed by low-temperature cathodoluminescence (CL) and transmission electron microscopy. Misfit dislocations were observed in the sample with higher In content. Large-angle convergent-beam electron diffraction has been newly applied to this system as a reliable method for determining dislocation character. All misfit dislocations studied in plan-view specimens revealed dark line contrast in appropriately chosen monochromatic CL images irrespective of the dislocation character or its alpha or beta form. A simple one-to-one correlation between dislocations and dark lines was obtained. The very different well widths for InxGa1-xAs wells in the structures resulted in very different emission energies in CL experiments. It was therefore possible to deduce in which quantum well a particular dislocation segment lay by the energy of the monochromatic image which showed dark-line contrast. As a result, dislocations were traced stepping progressively from one well to another. It was also proved that most dislocations lay in the first-grown well although it was the narrowest. The implication of these results and potential applications of the experimental technique are discussed.

TEM Study of Dislocations Structure in in 0.82 Ga 0.18 As/InP Heterostructure with InGaAs As Buffer Layer

Effects of In 0 . 82 Ga 0 . 18 As / InP Double Buffers Design on the Microstructure of the In 0 . 82 G 0 . 18 As / InP Heterostructure

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Transmission electron microscopy study of In(0.83)Ga(0.17)AS photodetectors with linearly graded InxAl1-xAs buffer and digital graded superlattices

The relationship between the dislocations and microstructure in In 0.82 Ga 0.18 As/InP heterostructures

The Relationship Between the Dislocations and Microstructure in In0.82Ga0.18As/InP Heterostructures

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Dislocations And Related Traps In P-Ingaas/Gaas Lattice-Mismatched Heterostructures

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

The Effect of Buffer Types on the In 0.82 Ga 0.18 As Epitaxial Layer Grown on an InP (100) Substrate.

Dislocations in InAs Epilayers Grown by MBE on GaAs Substrates under Various Conditions

Study of dislocation density in MBE HgCdTe epilayers

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Study of the Graded Buffer Layer Effect on GaInAs by X-Ray Diffractometer

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

Threading Dislocation Behavior in InGaAs/GaAs (001) Superlattice Buffer Layers

Effect of thicknesses of InP epilayers on InP/GaAs heterostructure

The Study of Misfit Dislocations in Inxga1-Xas/Gaas Strained Quantum-Well Structures

Reduction of Misfit Dislocation Density in Metamorphic Heterostructures by Design Optimization of the Buffer Layer with Non-Linear Graded Composition Profile

Undulation structure of InSb buffer layer and its effect on electrical properties of InSb/GaAs epilayer