Studying of Buffer Effect on Quality of InSb on GaAs Substrate
LI Zhan-guo,LIU Guo-jun,LI Mei,YOU Ming-hui,XIONG Min,LI Lin,ZHANG Bao-shun,WANG Xiao-hua,WANG Yong
2007-01-01
Chinese Journal of Luminescence
Abstract:There has been sustained interesting in the area of band-gap III-V compound semiconductors for 3~5 μm infrared device applications.InSb is an attractive material because of its potential use for large area detector arrays,high frequency devices and magnetoresistive sonsors for position sensing.Unfortunately,InSb itself cannot be used as a substrate due to its very large parallel conduction.Semi-insulating GaAs has been widely employed as the substrate for InSb growth,because of its electrical isolation,low-cost and mechanical strength.The main obstacle to acquiring high quality InSb comes from the large lattice mismatch of 14.6%,between InSb and GaAs,which is particularly detrimental to thin films.In the experiments,obtaining high quality InSb by two-step growth process had been reported in the high mismatch systems.In this study,all the InSb epitaxial thin films were grown on SI-GaAs by VG solid source MBE.Reflection high-energy electron diffraction(RHEED) was used for in-situ monitoring InSb surface morphology,the effect of the buffer on quality of heteroepitaxial InSb films was systematically studied.Including a serious of samples,a GaAs buffer was not required,as it shows no apparent improvement for the quality of InSb.Optimized of the low-temperature(LT) layer was performed at maintaining binary growth,which in the cases was 350 ℃,and the folllowing high-temperature(HT) growth at 450 ℃.The epitaxial thin films characterization was presented and analyzed,including surface morphology,interface inspection and crystalline quality by atomic force microscopy(AFM),transmission electron microscopy(TEM) and X-ray diffraction(XRD) etc.We also described the problem between the different thickness InSb epilayer and Hall-mobility.In conclusion,high quality InSb epilayers strongly depends on LT InSb buffer layer.The InSb films were grown directly onto semi-insulating GaAs substrate,for our typical InSb samples with optimized buffer layer,room temperature DCXRD FWHM of 172″ and mobility of 64 300 cm2·V-1·s-1 at 77 K,were obtained.