Abstract:This paper presents the progress in the cadmium zinc telluride (CdZnTe) single crystal growth and high quality CdZnTe substrates fabrication at Shanghai Institute of Technical Physics (SITP). The 60 mm diameter ingots with almost 90% single-crystals were grown by the vertical Bridgman technique. The average single-crystal yield of all ingots grown in the last two years was about 60%. The large-size substrates (> 40 x 60 mm(2)) were obtained. The processing and assessment of CdZnTe substrates were introduced. Especially, the sliced wafers were etched by the bromine-methanol to remove slicing damage rather than by lapping and polishing. An Olympus BX51-IR transmission microscope with mapping function was employed to take images of the inclusions/precipitates in the full wafer and the surface of the wafers etched by the Evenson etchant. The inclusions with different shapes were investigated. The inclusions and precipitates were distinguished. The inclusions occurred at the crystal growth stage and the precipitates were separated from the nonstoichiometric crystals at the cooling stage. The both inclusions and precipitates mainly originated from the nonstoichiometric CdZnTe source materials. The mosaic structure of the etch pits profiles in the substrates has been eliminated. The etch pit density (EPD) of CdZnTe substrates was counted by the software and the average value of EPDs was less than 5 x 10(4) cm(-2). After the defects of the substrates were measured, the substrates were polished. The surface flatness and roughness of the substrates were also improved by optimizing the technology.

Fabrication and study on the HgCdTe MIS device of CdTe+ZnS double insulator films

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

A Junction-Level Optoelectronic Characterization of Etching-Induced Damage for Third-Generation HgCdTe Infrared Focal-Plane Array Photodetectors

STUDY ON THE PASSIVATION OF Hg_(1-x)Cd_xTe PHOTOVOLTAIC DETECTORS

Progress In The Cdznte Single Crystal Growth And Substrates Fabrication

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Interface properties of HgCdTe metal‐insulator‐semiconductor capacitors

Optical and Electronic Characterization on HgCdTe Materials

Applications of Cubic MgZnO Thin Films in Metal–Insulator–Silicon Structures

The Study of HgCdTe on Si by MBE

A Study Of Hg1-Xcdxte Surfaces Processed Using Inductively Coupled Plasma With Ch4/H-2/N-2/Ar Mixture

Progress in MBE growth of HgCdTe @ SITP

Molecular-beam Epitaxy-Grown HgCdTe Infrared Detector: Material Physics, Structure Design, and Device Fabrication

Fabrication and performances of arsenic-doped HgCdTe long-wavelength infrared photodiode arrays

The Dark Current Mechanism Of Hgcdte Photovoltaic Detector Passivated By Different Structure

Optimization of Plasma Etching of Sio2 As Hard Mask for Hgcdte Dry Etching

Mbe Growth Of Hgcdte And Device Applications

Investigating the influence of CdZnTe and HgCdTe material quality on detector image performance

On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process

Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p-n junctions.

Effects of different passivation layers on RV characteristics of long-wave HgCdTe gate-controlled diodes