Investigating the influence of CdZnTe and HgCdTe material quality on detector image performance

Wenhui Yuan,Chuanjie Zhang,Hongyu Liang,Xin Wang,Minjie Shangguan,Yue Gong,Bingjie Zhang,Huimin Zhang,Haiou Xie,Bing Yan,Li Huang
DOI: https://doi.org/10.1007/s10854-021-05849-y
2021-05-01
Abstract:High-quality tellurium zinc cadmium (CZT) crystal materials and tellurium cadmium mercury (MCT) epitaxial materials are the key materials for the preparation of high-performance MCT-cooled detectors. Studying the relationship between material defects and device imaging is essential for improving the material quality and device performance. In this work, we summarize the defects of the CZT single crystal and the surface defects of the MCT film. Furthermore, we demonstrate the effect of CZT and MCT material defects and lattice matching on the imaging performance of the chips, and summarize the material quality improvement and the standard control methods. Through processes such as heat treatment, the size of the inclusions is controlled to be less than 20 μm and the density is less than 20 cm<sup>−2</sup>. A focal plane array (FPA) with good uniformity imaging (NETD 14.9 mK, defective pixel rate 0.03%) can be obtained by improving the material preparation level and formulating suitable material selection standards. Based on the continuous improvement of yield of FPA preparation process, MCT detectors can be fabricated in batches based on the optimized material quality.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study how the quality of CdZnTe (cadmium - zinc - telluride) and HgCdTe (mercury - cadmium - telluride, abbreviated as MCT) materials affects the detector image performance. Specifically, the author focuses on the relationship between material defects and device imaging, which is crucial for improving material quality and device performance. By analyzing and summarizing tens of thousands of chip manufacturing processes and their results, the paper explores the influence of surface defects of CZT single crystals and MCT thin films on chip imaging performance, and proposes methods for improving material quality and control standards. The key points of the paper include: 1. **Summary of material defects**: The paper describes in detail the defect types in CZT single crystals, such as twin - layer stacking faults, micro - twins, dispersed defects and network defects, as well as the surface defects of MCT thin films. 2. **Influence of defects on imaging performance**: Through experimental data, the paper shows how the defects of CZT and MCT materials affect the imaging performance of chips, especially uniformity and reliability. 3. **Improvement of material quality**: The paper proposes a series of methods to control and reduce material defects, for example, by heat treatment to control the size of inclusions below 20 micrometers and the density below 20 per square centimeter. 4. **Process optimization**: By optimizing the material preparation level and formulating appropriate material selection criteria, the paper shows how to obtain a focal - plane array (FPA) with high - uniformity imaging (NETD 14.9 mK, defective pixel rate 0.03%). In summary, this paper aims to propose effective material improvement and process control methods by in - depth study of the influence of material defects on detector imaging performance, so as to realize the mass production of high - performance MCT cooled detectors.