Abstract:A detailed study of the chemical interface structures in CdS/RbInSe2/Cu(In,Ga)Se2 solar cell layer stacks using hard X‐ ray photoelectron spectroscopy is conducted. The RbInSe2 layer is found to be Rb‐deficient and a clear impact of the presence of Rb (species) is observed on the duration of the induction period of the CdS chemical bath deposition process, resulting in the enhanced formation of Cd─Se bonds. Performance‐enhancing heavy alkali‐based post‐deposition treatments (PDT) of Cu(In,Ga)Se2 (CIGSe) thin‐film solar cells absorbers often induce the formation of a Rb‐ In‐Se phase on the CIGSe absorber. Co‐evaporation of an interfacial RbInSe2 (RISe) layer between buffer and absorber can also benefit cell performance. A detailed analysis of the chemical interface structures in CdS/RISe/CIGSe layer stacks is performed using hard X‐ray photoelectron spectroscopy (HAXPES). For comparison, stacks without RISe and based on RbF PDT CIGSe absorbers are also studied. When aiming for the direct co‐evaporation of a RISe layer on the CIGSe absorber, the formation of an additional In‐Se phase is found. For the RbF PDT CIGSe absorbers, the study only finds small amounts of Rb and no indication for a RISe layer formation. Examining layer stacks prepared via additional chemical bath deposition (CBD) of CdS reveals a clear impact of the presence of Rb (or of Rb‐containing species) on the CIGSe surface. In these cases, an increase of the induction/coalescence period is found at the beginning of the CBD buffer layer growth process and the formation of Cd─Se bonds; thereafter, a more compact CdS layer growth is observed.

Tem and Xps Studies on Cds/Cigs Interfaces

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Mechanism‐Based Approach of CdS/Cu(In,Ga)Se2 (CIGS) Interfaces for CIGS Solar Cells Through Deposition in Different Stages of Continuous Chemical Bath Deposition Reaction: Key to Achieving High Photovoltaic Performance

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Synthesis and Characterization of CIGS Powder

Structures, Optical Absorption and Electrical Properties of Pulsed-Laser-Deposited Cuin0.8ga0.2se2 Thin Films and Their Use in Cigs/Pcbm Photovoltaic Structures

Optoeletronic investigation of Cu 2 ZnSn(S,Se) 4 thin-films & Cu 2 ZnSn(S,Se) 4 /CdS interface with scanning probe microscopy

Interface Formation between CdS and Alkali Postdeposition-Treated Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers-Key To Understanding the Efficiency Gain

A microstructural study on the surface and interface of CdTe/CdS solar cells

Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell

Chemical Interface Structures in CdS/RbInSe2/Cu(In,Ga)Se2 Thin‐Film Solar Cell Stacks

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

Effect of Se Vapor Concentration on Cigs Film Preparation

Raman and XPS Studies of CIGS/Mo Interfaces under Various Annealing Temperatures

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Modification of surface and interface of copper indium gallium selenide films with sulfurization

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

The Effects of Preheating Temperature on CuInGaSe2/CdS Interface and the Device Performances

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells