Abstract:GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable to those grown on GaAs substrates, which is one of the state-of-the-art alternative substrates currently used to grow HgCdTe for the fabrication of MWIR detectors and focal plane arrays. Typically, HgCdTe materials grown on GaSb are found to have a rocking curve (double crystal x-ray diffraction) full width at half maximum of ~122 arcsec and an etch pit density of ~mid-106 cm–2. Electron backscatter diffraction mapping shows that the lattice misorientation/misfit dislocations near the HgCdTe/CdTe interface are negligible for GaSb substrates in comparison to GaAs substrates, and that the material quality of the HgCdTe layer on GaSb is determined primarily by the material quality of the CdTe buffer layer. These preliminary results are very encouraging considering that this is a relatively recent research effort, and higher quality MBE-grown HgCdTe materials are expected on GaSb substrates with further optimization of HgCdTe growth conditions as well as further improvements in the growth conditions for CdTe buffer layers.

The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes

HgCdTe photodiode arrays passivated by MBE in-situ grown CdTe film

Effects of different passivation layers on RV characteristics of long-wave HgCdTe gate-controlled diodes

MBE HgCdTe on Alternative Substrates for FPA Applications

STUDY ON THE PASSIVATION OF Hg_(1-x)Cd_xTe PHOTOVOLTAIC DETECTORS

Passivation Effect of Atomic Layer Deposition of Al 2 O 3 Film on HgCdTe Infrared Detectors

Optical and Electronic Characterization on HgCdTe Materials

The Study of HgCdTe on Si by MBE

Progress in MBE growth of HgCdTe @ SITP

Composition Control and Surface Defects of MBE-grown HgCdTe

CdTe Surface Passivation by Electric Field Induced at the Metal-Oxide/cdte Interface

MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates

The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour deposition

MBE HgCdTe on Si and GaAs Substrates

Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p-n junctions.

Molecular Beam Epitaxy of Hgcdte on (211)B Cdznte

Study of Surface Defects Induced by Impurities from Mercury Source on MBE-grown HgCdTe Epilayers

Study of Junction Performance in Mid-Wavelength HgCdTe Photodiodes by Laser Beam-Induced Current Microscope

Application of infrared transmission spectra in the assessment of HgCdTe epilayers