Abstract:Mercury cadmium telluride (Hg 1−x Cd x Te) is widely utilized for infrared detection applications. However, the quality of the surface and the presence of interface defects significantly impact device performance, so further improvements in surface passivation are still necessary. In this study, we explore the use of plasma-enhanced atomic layer deposition (PE-ALD) to deposit HfO 2 as a passivation layer for HgCdTe in the temperature range of 80–160 °C. The insulating film, semiconductor surface, and their interface are characterized using spectral ellipsometry, X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS), atomic force microscopy (AFM), electron microscopy, and capacitance–voltage ( C – V ) methods. XPS analysis reveals that the fraction of impurities in the HfO 2 films significantly decreases at higher deposition temperatures. Simultaneously, changes in the surface composition of HgCdTe become more pronounced. The bandgap width of HfO 2 and the insulator–semiconductor interfacial band discontinuity are estimated using EELS and XPS. The surface morphology of the deposited coatings closely resembles that of the underlying HgCdTe. The permittivity of the insulator and the effective fixed charge strongly depend on the deposition temperature. Our findings demonstrate that low-temperature PE-ALD HfO 2 effectively passivates the HgCdTe surface, and we propose an optimal deposition temperature for the further development of HgCdTe-based devices.

Passivation Effect of Atomic Layer Deposition of Al 2 O 3 Film on HgCdTe Infrared Detectors

The Effect of Al2O3 Surface Passivation Layer Prepared by ALD Method on the Performance of CdZnTe Thick Film Detectors

HgCdTe surface passivation with low-temperature plasma-enhanced atomic layer deposited HfO 2

Thermal Stability of Atomic Layer Deposition Al2o3 Film on Hgcdte

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

STUDY ON THE PASSIVATION OF Hg_(1-x)Cd_xTe PHOTOVOLTAIC DETECTORS

HgCdTe photodiode arrays passivated by MBE in-situ grown CdTe film

Effects of different passivation layers on RV characteristics of long-wave HgCdTe gate-controlled diodes

Enhanced Thermal Stability of Conductive Mercury Telluride Colloidal Quantum Dot Thin Films Using Atomic Layer Deposition

Marked effects of Al-rich AlN transition layers on the performance of CdZnTe films for solar-blind photodetector

Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

Effect of passivation sequence on the performance of planar CdZnTe detectors

Thermal Engineering in ALD-grown ZGO Thin Films for High-Performance Photodetectors

Rectification and Tunneling Effects Enabled by Al2O3 Atomic Layer Deposited on Back Contact of CdTe Solar Cells

Studies On Different Passivation On Inas/Gasb Type-Ii Superlattice Photodetectors

Effect of low-temperature rapid annealing on structural and electrical properties of electroless platinum contacts on CdZnTe detectors

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates