Structure and Electrical Properties of Na 0.5 Bi 0.5 TiO 3 Ferroelectric Thick Films Derived from a Polymer Modified Sol-Gel Method

Hongfen Ji,Wei Ren,Lingyan Wang,Peng Shi,Xiaofeng Chen,Xiaoqing Wu,Xi Yao,Sien-Ting Lau,Qifa Zhou,K. Kirk Shung
DOI: https://doi.org/10.1109/tuffc.2011.2054
2011-01-01
Abstract:Lead-free Na0.5Bi0.5TiO3 (NBT) ferroelectric thick films were prepared by a poly(vinylpyrrolidone) (PVP) modified sol-gel method. The NBT thick films annealed from 500 degrees C to 750 degrees C exhibit a perovskite structure. The relationship between annealing temperature, thickness, and electrical properties of the thick films has been investigated. The dielectric constants and remnant polarizations of the thick films increase with annealing temperature. The electrical properties of the NBT films show strong thickness dependence. As thickness increases from 1.0 to 4.8 mu m, the dielectric constant of the NBT films increases from 620 to 848, whereas the dielectric loss is nearly independent of the thickness. The remnant polarization of the NBT thick films also increases with increasing thickness. The leakage current density first decreases and then increases with film thickness.
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