Abstract:Porous silicon (PSi) has developed for many applications such as gas and humidity sensors. Various methods are available to fabricate PSi, and electrochemical anodization is common due to low cost and easy use. Current density, etching/anodization time, type of etching solution, and electrode distance are the parameters determining resulting pores. The substrate used n-type silicon wafer with (111)-orientation and resistivity of 1.5-4.5 Ω.cm with a size of 1.5×1 cm 2 . The cleaning process of the samples employed the RCA cleaning procedure. Conductive contacts required for the electrochemical anodization were aluminum on the samples. The electrodes were the Si sample acting as anode and platinum (Pt) electrode as a cathode. The etching solution using a mixture of HF (40%) and ethanol (99%) with a 1:1 ratio. The electrode distance was 1.5, 2.0, and 2.5 cm. The current density for each electrode distance was 10, 30, and 50 mA/cm 2 with an anodization time of 30 min. SEM and UV-Vis characterizations were applied to obtain surface morphology and reflectance, respectively. For all samples, the reflectance of PSi was lower than the reflectance of the original silicon surface (no pores). This condition indicates that the PSi is suitable as an anti-reflective layer in a solar cell. However, the PSi of reflectance curves has irregular shapes as a function of wavelength for different electrode distance and the current density. The SEM images confirmed that the pores formed on the silicon surface were inhomogeneous. The pore size decreased with the increase of the electrode distance while it increased as the increase of the current density. There was a correlation between pores size and reflectance at specific wavelength numbers.

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The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Al-assisted Anodic Etched Porous Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Influence of Microstructure on Optical Properties of Porous Silicon

Porous Si (111) Fabrication Using Electrochemical Anodization: Effects of Electrode Distance and Current Density

Effect of post-treatment processes on the photoluminescence of porous silicon

Relationship Between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Studies on microstructure and photoluminescence property of porous silicon

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

Kelvin Probe Force Microscopy Study on Anodization-Related Variations of Porous Silicon Nanostructures Combined with Photoluminescence and Raman Scattering

Microstructure and oxidation of porous silicon

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Effect of annealing on photoluminescence of passivated porous silicon

Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

Influence Of Anodization Current Density On Preparation And Corrosion Of N-Type Macroporous Silicon In 1.0 M Naoh

Improvement of Electroluminescence Properties of Light-Emitting Porous Silicon

Optimization of anodic current density for growth of thick p-type macropore porous silicon

Photoluminescence of oxidized porous silicon under UV-light illumination