Resistive Switching and Photovoltaic Effects in Ferroelectric BaTiO3-based Capacitors with Ti and Pt Top Electrodes
Hua Fan,Chao Chen,Zhen Fan,Luyong Zhang,Zhengwei Tan,Peilian Li,Zhifeng Huang,Junxiang Yao,Guo Tian,Qiuyuan Luo,Zhongwen Li,Xiao Song,Deyang Chen,Min Zeng,Jinwei Gao,Xubing Lu,Yue Zhao,Xingsen Gao,Jun-Ming Liu
DOI: https://doi.org/10.1063/1.4999982
IF: 4
2017-01-01
Applied Physics Letters
Abstract:We have comparatively studied the dielectric, ferroelectric, conduction, and photovoltaic properties of Ti/BaTiO3 (BTO)/SrRuO3 (SRO) and Pt/BTO/SRO capacitors. The resistive switching (RS) is observed in the Pt/BTO/SRO capacitor while it is absent in the Ti/BTO/SRO capacitor, which may be attributed to the interfacial layer existing between Pt and BTO and the Ti/BTO Ohmic interface, respectively. Further analyses on the conduction mechanisms suggest that the RS may be caused by the opening/closing of conduction paths in the Pt/BTO interfacial layer, whereas the polarization is ruled out as the origin of RS because of the inconsistency between the RS switching voltages and coercive voltages. On the other hand, it is observed that the photovoltaic effects (PVEs) in both Ti/BTO/SRO and Pt/BTO/SRO capacitors are electrically unswitchable and the open-circuit voltages of the two capacitors are similar in magnitude, implying that the PVE is driven by an internal bias field rather than the polarization-induced field. The existence of such an internal bias field is indicated by the self-polarization and imprint phenomena. Our study demonstrates that the interfacial layer and the internal bias field can be the major causes for the RS and PVE in certain ferroelectric capacitors, respectively, whereas the polarization may not necessarily play a role. Published by AIP Publishing.