Polarization Imprint Effects on the Photovoltaic Effect in Pb(Zr,Ti)O3 Thin Films
Zhengwei Tan,Junjiang Tian,Zhen Fan,Zengxing Lu,Luyong Zhang,Dongfeng Zheng,Yadong Wang,Deyang Chen,Minghui Qin,Min Zeng,Xubing Lu,Xingsen Gao,Jun-Ming Liu
DOI: https://doi.org/10.1063/1.5020694
IF: 4
2018-01-01
Applied Physics Letters
Abstract:The polarization imprint along with the photovoltaic (PV) effect has been studied in Pt/Pb(Zr0.3Ti0.7)O3/SrRuO3 ferroelectric capacitors. It is shown that the positive DC poling induces the imprint with a downward direction whereas the negative DC poling suppresses the imprint (i.e., rejuvenation). In the polarization up state, the imprinted capacitor exhibits degraded PV properties compared with the rejuvenated one. This may be because the imprint reduces the number of upward domains, thus lowering the driving force for the PV effect. In the polarization down state, however, the rejuvenated capacitor enters the imprinted state spontaneously. This rejuvenation-to-imprint transition can be further aggravated by applying positive voltages and ultraviolet illumination. It is proposed that the domain pinning/depinning, which are associated with the oxygen vacancies and trapped electrons modulated by polarization, voltage, and illumination, may be responsible for the polarization imprint and rejuvenation. Our study therefore sheds light on the correlation between the polarization imprint and the PV effect in the ferroelectrics and also provides some viable suggestions to address the imprint-induced degradation of PV performance.