The shifting of P-E hysteresis loop by the asymmetric contacts on ferroelectric PZT thin films

J. J. Lee,S. B. Desu
DOI: https://doi.org/10.1080/07315179508204723
1995-11-01
Ferroelectrics Letters Section
Abstract:Ferroelectric PZT thin films were fabricated by metal-organic decomposition (MOD) onto Pt/Ti/SiO2/Si substrates. Different metals (i.e., noble metals: Pt, Ag, and non-noble metals: Al, Cr, In) were selected for top electrodes on PZT thin films. Capacitors with noble metals as top electrodes exhibited symmetric P-E hysteresis loops, whereas capacitors with non-noble metals as top electrodes exhibited asymmetric P-E hysteresis loops. Equivalent energy-band diagrams for these two different capacitor structures are proposed based on that noble metals form Schottky contacts and non-noble metals form ohmic contacts with ferroelectric PZT thin films. The internal field built up by the band bending in the bottom PZT/Pt Schottky contact results in the shifting of P-E hysteresis loop for capacitors with non-noble metals as top electrodes.
physics, condensed matter
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