Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Vertical Drift of P–E Hysteresis Loop in Asymmetric Ferroelectric Capacitors

Drift and Deformation of the Hysteresis Curve in Thin Film Ferroelectric Capacitors with Conductance

Leakage Behavior and Distortion of the Hysteresis Loop in Ferroelectric Thin Films

A Hysteresis Model for Ferroelectric Ceramics with Mechanism for Minor Loops

Extension of the Landau Theory for Hysteretic Electric Dynamics in Ferroelectric Ceramics

Hysteretic Dynamics of Ferroelectric Materials under Electro-Mechanical Loadings

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

The shifting of P-E hysteresis loop by the asymmetric contacts on ferroelectric PZT thin films

Current - Voltage Characteristic of Asymmetric Ferroelectric Capacitors

Asymmetry Of The Hysteresis Loops For The Au/Pbtio3/Yba2cu3o7-Delta Capacitor

Asymmetry of the hysteresis loops for the Au/PbTiO3/YBa2Cu3O7-δ capacitor

Dynamic Hysteresis of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films

Dynamic Hysteresis in Ferroelectric Systems: Experiment and Monte Carlo Simulation

Scaling of Dynamic Hysteresis in Ferroelectric Spin Systems

A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor

Dynamic hysteresis scaling behavior in polyvinylidene fluoride-trifluoroethylene ferroelectric copolymer thin films

Effects of Fatigue and Damage on the Hysteresis Loops of Ferroelectric Ceramics

Frequency Response and Scaling of Hysteresis for Ferroelectric Pr(Zr0.52Ti0.48)O3 Thin Films Deposited by Laser Ablation

On the negative capacitance in ferroelectric heterostructures

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Macroscopic Differential Model for Hysteresis and Butterfly-Shaped Behavior in Ferroelectric Materials