Abstract:The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and science in the past decade. In this article, we present a physical picture for a better understanding of the hysteresis-free charge boost effect observed experimentally in metal-ferroelectric-insulator-metal (MFIM) capacitors. By introducing the dielectric (DE) leakage and interfacial trapped charges, our simulations of the hysteresis loops are in a strong agreement with the experimental measurements, suggesting the existence of an interfacial oxide layer at the FE-metal interface in metal-ferroelectric-metal (MFM) capacitors. Based on the pulse switching measurements, we find that the charge enhancement and hysteresis are dominated by the FE domain viscosity and DE leakage, respectively. Our simulation results show that the underlying mechanisms for the observed hysteresis-free charge enhancement in MFIM may be physically different from the alleged NC stabilization and capacitance matching. Moreover, the link between Merz's law and the phenomenological kinetic coefficient is discussed, and the possible cause of the residual charges observed after pulse switching is explained by the trapped charge dynamics at the FE-DE interface. The physical interpretation presented in this work can provide important insights into the NC effect in MFIM capacitors and future studies of low-power logic devices.

Drift and Deformation of the Hysteresis Curve in Thin Film Ferroelectric Capacitors with Conductance

Leakage Behavior and Distortion of the Hysteresis Loop in Ferroelectric Thin Films

Vertical Drift of P–E Hysteresis Loop in Asymmetric Ferroelectric Capacitors

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Frequency Response and Scaling of Hysteresis for Ferroelectric Pr(Zr0.52Ti0.48)O3 Thin Films Deposited by Laser Ablation

Dynamic Hysteresis of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films

Current - Voltage Characteristic of Asymmetric Ferroelectric Capacitors

An Analysis of Imprinted Hysteresis Loops for a Ferroelectric Pb(Zr,Ti)O3 Thin Film Capacitor Using the Switching Transient Current Measurements

Scaling of Dynamic Hysteresis in Ferroelectric Spin Systems

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

Dynamic Hysteresis in Ferroelectric Systems: Experiment and Monte Carlo Simulation

A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor

The shifting of P-E hysteresis loop by the asymmetric contacts on ferroelectric PZT thin films

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors

Manipulating Leakage Behavior Via Thickness in Epitaxial BaZr0.35Ti0.65O3 Thin Film Capacitors

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Asymmetry of the hysteresis loops for the Au/PbTiO3/YBa2Cu3O7-δ capacitor

Simulation On The Hysteresis Of Ferroelectric Thin Films

Asymmetry Of The Hysteresis Loops For The Au/Pbtio3/Yba2cu3o7-Delta Capacitor