Simulation On The Hysteresis Of Ferroelectric Thin Films

Ke-Qing Ouyang,Tian-Ling Ren,Li-Tian Liu,Dan Wei
DOI: https://doi.org/10.1080/10584580490893628
2004-01-01
Integrated Ferroelectrics
Abstract:The ferroelectric hysteresis in thin films is studied using a computer simulation model based on Time Dependent Ginzbura-Landau equations. The model for the polarization of ferroelectric thin film is set up with the analysis of the crystal structure and the principle of spontaneous polarization. For stress-free ferroelectric thin film model. the total energy for the model is the sum of the Landau free energy, the local depolarization energy, the electric dipole-dipole interactions and the energy induced by external electric field. The temporal evolution of the polarization vectors is investiated by solving the Ginzburg-Landau equations numerically and the ferroelectric hysteresis is obtained. The effect of crystal orientation on the ferroelectric properties in thin films is also discussed.
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