Effect of Tunnel Junctions on Properties of Amorphous Silicon/Microcrystalline Silicon Tandem Solar Cells on Flexible Substrates

ZHOU Li-hua,LIU Cheng,YE Xiao-jun,QIAN Zi-qing,CHEN Ming-bo
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2010.05.044
2010-01-01
Abstract:Series of p+/n+ tunnel junctions with different thickness of amorphous silicon/microcrystalline silicon solar cells were prepared by plasma enhanced chemical vapor deposition(PECVD).The influences of p+/n+ tunnel junctions on the electrical and optical properties of solar cells were investigated.It is found that the open circuit voltage increased and the short circuit current decreased as the thickness of p+ layer increasing,and the short circuit current and FFhave a best value when the thickness of n+ layer changes.With the optimized p+/n+ tunnel junctions,amorphous silicon/microcrystalline silicon tandem solar cells on stainless steel flexible substrates with conversion efficiency of 9.95%(AM0,1353 W/m2) and on polyimide with 9.35%(AM0,1353 W/m2) were obtained.
What problem does this paper attempt to address?