The Study of a New N/p Tunnel Recombination Junction and Its Application in A-Si:H/μc-si:h Tandem Solar Cells

Li Gui-Jun,Hou Guo-Fu,Han Xiao-Yan,Yuan Yu-Jie,Wei Chang-Chun,Sun Jian,Zhao Yin,Geng Xin-Hua
DOI: https://doi.org/10.1088/1674-1056/18/4/066
2009-01-01
Chinese Physics B
Abstract:This paper reports that a double N layer (a-Si:H/mu c-Si:H) is used to substitute the single microcrystalline silicon n layer (n-mu c-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/mu c-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/mu c-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
What problem does this paper attempt to address?