Abstract:Aluminum nitride (AlN) is a multifunctional semiconductor. AlN doped with rare earth ions has broad application prospects in monochromatic lighting, color display, laser medium, medical treatment, etc. In this paper, an Er 3+ -doped AlN film has been prepared by radio frequency magnetron sputtering and characterized by surface morphology, chemical composition and photoluminescence (PL) , focusing on the emission mechanism of Er 3+ in the AlN host . The films show PL in a wide range of the visible (540, 560 and 668 nm) and near-infrared ( 816, 869, 985 and 1534 nm ) ranges . It has been found a certain energy transfer bridge between Er 3+ and AlN defect-related optical transitions. At 532 nm excitation, V Al -O N vacancy-oxygen complex in the AlN host efficiently absorbs photons, then, nonradiative charge transfer (NRET) occurs from the defect levels to the levels of Er 3+ since they are in resonance. Since there is a resonance of a donor emission level and an acceptor absorption level, Förster resonance energy transfer (FRET) occurs with the transfer efficiency about 51%. This results in a very strong enhancement of excitation of the 4f related PL. On the contrary, optical excitation at other energies results in a low intensity of the Er 3+ PL. As a matter of facts, a strong absorption of the AlN host and the FRET-enabling resonance of donor-acceptor levels allow for a great enhancement of the PL efficiency of Er 3+ ions. The results show that the impurity defect state of AlN has an important influence on the Er 3+ luminescence efficiency.

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