Abstract:The high-voltage performance of insulator is one of the main areas of pulsed power research and development, and the surface flashover voltage is the critical factor strongly influencing the voltage hold-off capability of vacuum pulsed power devices. In this work, the influence of different electrodes and boundary conditions on the electric field distribution at the triple junction was simulated and experimentally studied. The results indicate the value of V-ho can be raised significantly as the screening length increased from 3mm to 18mm, the hold-off voltage of the screening electrode is up to 150 kV and over 50% higher than that of the plate electrode. However, the hold-off voltage decrease after the screening electrode becomes longer than 18 mm The reason for the observed wide dispersion in the breakdown values for the different electrodes was explored by examining surface structures of the insulator under an SEM (Scanning Electron Micrograph). When the value of screening length is greater than 18mm, we could find breakdown point in special area. For the better explanation of the experiment phenomenon, a simulation model of the surface flashover in vacuum with special configuration is established by a 2D PIC-DSMC code, in which some basic physical process such as field emission in the vicinity of the metal-vacuum-dielectric junction, charge accumulation effect in insulator surface, secondary electron emission, gas desorption, and electrons interact with gas etc are considered. These simulation results are in comparison with the experiment phenomenon, these are the base to in-depth understand surface flashover in vacuum. A new developing process of surface flashover in vacuum by high voltage pulses is also discussed.

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Influence of Electrode Contact on Luminescence from Alumina Ceramic Surface under Ac Electric Field in Vacuum

Development Process of Surface Flashover along Alumina Ceramics under AC Voltage in Vacuum

Experimental Study of Low-Voltage -Driven Thin Film Electroluminescence Mechanism

Optical Investigation of Ac Preflashover of Alumina Ceramic in Vacuum

Electroluminescence from Metal-Oxide-semiconductor Devices with Erbium-Doped CeO2 Films on Silicon

Surface Electroluminescence Phenomena from Polymer under AC Voltage

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Study on Electroluminescence Phenomena from Ptfe under Hvac

Surface Electroluminescence Phenomena of Insulating Polymers

Defect-Related Electroluminescence from Metal-Oxide-Semiconductor Devices with Zro2 Films on Silicon

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Green electroluminescence of Al2O3 film

Surface Flashover of Alumina Ceramic Insulators in Vacuum

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

A Mechanism for the Growth of a Plasma Electrolytic Oxide Coating on Al

The effect of metal particles on surface flashover characteristics of alumina ceramic under pulse voltage in vacuum

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

In Situ Fabrication of Alumina Nanotube Array and Photoluminescence

High-speed Imaging of Explosive Exoemission from an Alumina Ceramic in Vacuum

Electroluminescence from Silicon-Based Single Ion Transport Light Emitting Electrochemical Cell