Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Green electroluminescence of Al2O3 film

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Strong Green Electroluminescence from Silicon Based Oxide Films

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Green Electroluminescence from Tb4O7 Films on Silicon: Impact Excitation of Tb3+ Ions by Hot Carriers

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Strong Green-Yellow Electroluminescence From Oxidized Amorphous Silicon Nitride Light-Emitting Devices

Electroluminescence from Metal-Oxide-semiconductor Devices with Erbium-Doped CeO2 Films on Silicon

Narrow-Band Green-Emissive -SiAlON:Eu<SUP>2+</SUP> Phosphor-in-Glass Film for Laser Display Applications

Influence of Al-doping on Electroluminescence of Silicon-Based Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Blue Electroluminescence from Tris-(8-Hydroxyquinoline) Aluminum Thin Film

Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures

Electroluminescence of SnO2∕p-Si heterojunction

ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE+-IMPLANTED SIO2 FILMS THERMALLY GROWN ON CRYSTALLINE SILICON

Photoluminescence Properties of Er3+-doped Al2O3 Film Synthesized from Er-ion-implanted Γ-Alooh Xerogel

Electroluminescence from Er-doped GeO 2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Oxygen Induced Strong Green Light Emission From Low-Temperature Grown Amorphous Silicon Nitride Films

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Properties of High-Quality LaAlO3 Film Deposited by in Situ Plasma-Enhanced-Atomic-Layer-Deposition