Abstract:An Erbium doped light emitting device characterized with long-term reliability has been realized. The devices are based on npn heterojunction structure which are composed of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}$ </tex-math></inline-formula> -Si/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si/Er-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -ZnO. The electroluminescence intensity of Er3+ ions has a well linear relation with operating currents. Meanwhile, the Er3+ ions electroluminescence device with a 3 V onset voltage can keep on operating for more than 1200 hours, attributed to the separation of supply and acceleration of electrons which excite Er3+ ions. Electrons originated from the former <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}{p}$ </tex-math></inline-formula> junction diffuse through <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si layer, then they are accelerated in the following space charge region of the latter pn junction to collide with Er3+ ions in ZnO layer. Moreover, the npn heterojunction device structure is also applicable to other rare earths such as Tm, Eu, etc. This strategy will pave a way to electroluminescence of rare earths, and also provide a monolithic silicon light source to integrated silicon photonics.

Experimental Study of Low-Voltage -Driven Thin Film Electroluminescence Mechanism

Experimental study of excitation efficiency distribution in low-voltage-driven thin film electroluminescent devices

Low–Voltage–Driven Thin Film Electroluminescent Device with Stacked Insulators

Study on the mechanism of organic thin film electroluminescence

Analysis on Mechanism of Current Transport in Organic Electroluminescent Thin Film Device

Structure and electroluminescence characteristics of organic thin film electroluminescent devices

Progress in Electroluminescent Thin Film Devices Using Rare Earth Organic Complex As Emitting Layer

A study of Electrochromic thin films and Devices by Photothermal Deflection Technique

Study on Fabrication Techniques and Photodectric Properties of PDP Surface Light Source

Development of Blue and Blue-Green Electroluminescent Thin Films Devices

Low-voltage thin-film electroluminescent devices with low-resistivity stacked insulators

Study of Preparation of Low Voltage Cathodoluminescent Phosphor and Application on Field Emission Display Screen

Studies on organic electroluminescent thin film devices

Ultra-low-threshold Field Emission from Conjugated Polymers

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Theoretical Investigation of High-Efficiency Organic Electroluminescent Material: HLCT State and Hot Exciton Process

Effects of Electric Field on the Electronic Structures in Electroluminescent Polymers

Low Driving Voltage Electroluminescence Device for Integrated Visual Strain Sensing

Electrophotoluminescence of Zno Film

SPATIAL DISTRIBUTION OF ELECTRON ENERGY IN THIN FILM ELECTROLUMINESCENT DEVICES

Studies On Carrier Confinement For Polymer Electroluminescent Devices With Multilayer Structure