Abstract:An Erbium doped light emitting device characterized with long-term reliability has been realized. The devices are based on npn heterojunction structure which are composed of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}$ </tex-math></inline-formula> -Si/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si/Er-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -ZnO. The electroluminescence intensity of Er3+ ions has a well linear relation with operating currents. Meanwhile, the Er3+ ions electroluminescence device with a 3 V onset voltage can keep on operating for more than 1200 hours, attributed to the separation of supply and acceleration of electrons which excite Er3+ ions. Electrons originated from the former <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}{p}$ </tex-math></inline-formula> junction diffuse through <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si layer, then they are accelerated in the following space charge region of the latter pn junction to collide with Er3+ ions in ZnO layer. Moreover, the npn heterojunction device structure is also applicable to other rare earths such as Tm, Eu, etc. This strategy will pave a way to electroluminescence of rare earths, and also provide a monolithic silicon light source to integrated silicon photonics.

Experimental study of excitation efficiency distribution in low-voltage-driven thin film electroluminescent devices

Experimental Study of Low-Voltage -Driven Thin Film Electroluminescence Mechanism

Study on the mechanism of organic thin film electroluminescence

Analysis on Mechanism of Current Transport in Organic Electroluminescent Thin Film Device

Structure and electroluminescence characteristics of organic thin film electroluminescent devices

Low–Voltage–Driven Thin Film Electroluminescent Device with Stacked Insulators

Theoretical Investigation of High-Efficiency Organic Electroluminescent Material: HLCT State and Hot Exciton Process

Low-voltage thin-film electroluminescent devices with low-resistivity stacked insulators

Investigation of Energy Transfer and Charge Trapping in Dye-Doped Organic Light-Emitting Diodes by Magneto-Electroluminescence Measurement

Change of the Dominant Luminescent Mechanism with Increasing Current Density in Molecularly Doped Organic Light-Emitting Devices

Study of Preparation of Low Voltage Cathodoluminescent Phosphor and Application on Field Emission Display Screen

SPATIAL DISTRIBUTION OF ELECTRON ENERGY IN THIN FILM ELECTROLUMINESCENT DEVICES

Highly Efficient Nondoped Green Organic Light-Emitting Diodes with Combination of High Photoluminescence and High Exciton Utilization

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Research on the Emission Process of Doped Pholed by Transient El and Delay Luminescence Measurement

Studies on organic electroluminescent thin film devices

Detailed Studies on Energy Loss Mechanism in Phosphor-Sensitized Fluorescent Polymer Light-Emitting Devices

Probe For The Formation Ratio Between Excited Triplets And Singlets As Generated In Polymer Light-Emitting Diodes

Investigation on the Luminescence Improvement of Nanosized La2O3/Eu3+ Phosphor under Charge-Transfer Excitation

Optical Property and Energy Transfer in the Zno-Liybo2 Hybrid Phosphors under the Indirect Near-Uv Excitation

Origin of the Efficiency Roll-off in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Spectroscopy Study