Mos Capacitance Properties of Silicon-Based Pzt Thin Films

Xiuhua Zhang,Meirong Shi,Sumei Qin,Ming Guo,Hongmei Deng,Pingxiong Yang
DOI: https://doi.org/10.1117/12.792634
2008-01-01
Abstract:Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films were grown on silicon substrates by modified So1-Gel method using C4H6O4Pb•3H2O, ZrO(NO3)2•2H2O and Ti(OC4H9) as raw materials. PbTiO3 (PT) thin film was introduced as buffer layer. The microstructures of PZT thin films were characterized by XRD and SEM. Electrical properties such as C-V and leakage current characteristics of the films was investigated. The results show that PT buffer layer was helpful to improve the dielectric and ferroelectric properties of PZT thin films. PT buffer layer prevented the interface reaction and reduced the leakage current density of PZT/PT/Si structure about 10-2 compared with that of PZT/Si structure.
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