Abstract:Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry.

Phenomenological Model For The Spontaneous Polarization Of Gan

A Thermodynamic Model And Estimation Of The Experimental Value Of Spontaneous Polarization In A Wurtzite Gan

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Stability and Electronic Properties of GaN Phases with Inversion Symmetry to Inherently Inhibit Polarization

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations

Spontaneous Luminescence Polarizations of Wurtzite Ingan/Gan Quantum Wells

Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes

Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Polaronic Self-Trapped Energy and Effective Mass of A Cylindrical Wurtzite Gan Nanowire

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Rethinking Polarization in Wurtzite Semiconductors

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity

Measurement of Spin-Polarized Photoemission from Wurtzite and Zinc-Blende Gallium Nitride Photocathodes