Abstract:Photogalvanic effect (PGE) occurs in materials with non-centrosymmetric structures when irradiated by linearly or circularly polarized light. Here, using non-equilibrium Green's function combined with density functional theory (NEGF-DFT), we investigated the linear photogalvanic effect (LPGE) in monolayers of group-V elements (As, Sb, and Bi) by first-principles calculations. First, by designing a two-probe structure based on the group-V elements, we found a giant anisotropy photoresponse of As between the armchair and zigzag directions. Then, we analyzed Sb and Bi's charge and spin photocurrent characteristics when considering the spin-orbit coupling (SOC) effect. It is found that when the polarization direction of linearly polarized light is parallel or perpendicular to the transport direction ($\theta$ = $0^ \circ$ or $90^ \circ$), the spin up and spin down photoresponse in the armchair direction has the same magnitude and direction, leading to the generation of net charge current. However, in the zigzag direction, the spin up and spin down photoresponse have the same magnitude with opposite directions, leading to the generation of pure spin current. Furthermore, it is understood by analyzing the bulk spin photovoltaic (BSPV) coefficient from the symmetry point of view. Finally, we found that the net charge current generated in the armchair direction and the pure spin current generated in the zigzag direction can be further tuned with the increase of the material's buckling height $|h|$. Our results highlight that these group-V monolayers are promising candidates for novel functional materials, which will provide a broad prospect for the realization of ultrathin ferroelectric devices in optoelectronics due to their spontaneous polarization characteristics and high Curie temperature.

Measurement of Spin-Polarized Photoemission from Wurtzite and Zinc-Blende Gallium Nitride Photocathodes

Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes

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Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Photogalvanic Effect Induced Fully Spin Polarized Current and Pure Spin Current in Zigzag SiC Nanoribbons.

Photogalvanic effect induced charge and spin photocurrent in group-V monolayer systems

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

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Polarization Measurement of Spin-Polarized Electrons by Optical Electron Polarimeter

Quantum efficiency enhancement in simulated nanostructured negative electron affinity GaAs photocathodes

Strong Circular Photogalvanic Effect in ZnO Epitaxial Films

Spin-Polarized Injection into A P-Type Gaas Layer from A Co2mnal Injector

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Spin transport study in a Rashba spin-orbit coupling system

Quantum Efficiency Enhancement by Mie Resonance from GaAs Photocathodes Structured with Surface Nanopillar Arrays

Optical manipulation of linear magnetogyrotropic photogalvanic effect in a GaAs/Al0.3Ga0.7As heterostructure

Two-dimensional Centrosymmetrical Antiferromagnets for Spin Photogalvanic Devices

Experimental Observation of Isotropic In-Plane Spin Splitting in GaN∕AlGaN Two-Dimensional Electron Gas

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Measuring the spin polarization and Zeeman energy of a spin-polarized electron gas: Comparison between Raman scattering and photoluminescence