Structure and electrical properties of Pb(Zr 0.25 Ti 0.75 )O 3 thin films on LaNiO 3 —Coated thermally oxidized Si substrates

Dinghua Bao,Kaibin Ruan,Tong Liang

DOI: https://doi.org/10.1007/s10971-007-0743-7

2007-01-01

Journal of Sol-Gel Science and Technology

Abstract:Pb(Zr 0.25 Ti 0.75 )O 3 (PZT25) thin films were prepared on LaNiO 3 -coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO 3 electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm 2 and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO 3 -coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.