Abstract:By Sol-Gel method,conductive LaNiO3 thin films are prepared on Si(100),SiO2/Si,and Pt/Ti substrates using rapid thermal annealing,then PZT ferroelectric thin films deposit on LNO/Si and Pt/Ti substrates.The microstructure of the thin films has been investigated by X-ray diffraction(XRD).Surface morphologies are determined by Atomic Force Microscope(AFM).Energy Dispersive Spectrometer(EDS) results can tell us the component message on different films.Properties of PZT thin films are determined by XRD and the curve of dielectric constant and dielectric loss.Experiment results show that LNO/Si(100) multilayer thin films can get tetragonal structure,while LNO thin films deposited on SiO2/Si and Pt/Ti/SiO2/Si,pseudomorphic cubic phase.AFM appears conductive electric thin films deposited on Si(100) have a smooth,dense,and crack-free surface morphology,So LNO/Si(100) thin films can be used as substrate to deposite PZT ferroelelctic thin film.PZT thin films can get perovskite structure on LNO and Pt/Ti,the intensity of X-ray peak of PZT/LNO are higher than that of LNO/Pt/Ti.The dielectric constant and the dielectric loss of PZT thin films deposited on Pt/Ti are lower than those of LNO.At 100 kHz,the dielectric constant and the dielectric loss of PZT on LNO and Pt/Ti are 562,0.29;408,0.037 respectively.

Metal-organic Chemical Liquid Deposited (110)-Preferred LaNiO3 Buffer Layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Films

Improved Dielectric Properties of (110)-Preferred (pb, La) (zr, Sn, Ti)O-3 Antiferroelectric Thin Films on Metalorganic Decomposition-Derived Lanio3 Buffer Layer

Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin films on LaNiO3/Si substrate

(Pb,la)(zr,sn,ti)o-3 Antiferroelectric Thin Films Grown on Lanio3-Buffered and Pt-Buffered Silicon Substrates by Sol-Gel Processing

Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer layer

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O 3 and Pb (Nb,Zr,Sn,Ti)O 3 antiferroelectric thin films deposited on LaNiO 3 -buffered silicon substrates by sol-gel processing

Preparation of Plzt Antiferroelectric Thin Films on Zro2 Buffered Substrates

Electric Fatigue In Pb(Nb,Zr,Sn,Ti)O-3 Thin Films Grown By A Sol-Gel Process

Improvement of the Energy Storage Performance of Antiferroelectric Pb,La(Zr,Ti)O3 Thin Films by the LaNiO3 Buffer Layer on the Metal Electrode

The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode

Orientation Control and Conductive Property of LaNiO3 Thin Films Deposited on Si(111)Substrates

Preparation of Highly (111)-Oriented (Pb,la)(zr,sn,ti)o-3 (plzst) Antiferroelectric Thin Films by Modified Sol-Gel Process Using A Novel Tin Source, Dibutyloxide of Tin

Composition-Dependent Electrical Properties of (pb, La)(Zr, Sn, Ti)O-3 Antiferroelectric Thin Films Grown on Platinum-Buffered Silicon Substrates

Structural and electrical properties of LaNiO3 thin film electrodes for integrated ferroelectric devices

Temperature And Frequency Dependence Of Dielectric Properties Of (Pb, La)(Zr, Sn, Ti)O-3 Antiferroelectric Thin Films On Lanio3 Bottom Electrode With Different Sheet Resistance

Ferroelectric Properties of Bi3.25la0.75ti3o12 Thin Films Grown on the Highly Oriented Lanio3 Buffered Pt/Ti/Sio2/Si Substrates

Ferroelectric properties of Bi 3 . 25 La 0 . 75 Ti 3 O 12 thin films grown on the highly oriented LaNiO 3 buffered Pt Õ Ti Õ SiO 2 Õ Si substrates

Fabrication and Characterization of Sol–Gel Derived (100)‐textured (pb0.97la0.02)(zr0.95ti0.05)o3 Thin Films

Effects of LaNiO3 Seeding Layers on the Crystal Structure and Electrical Properties in 0.94(bi0.5na0.5)tio3–0.06batio3 Thin Films

Preparation and Study of Conductive LaNiO3 Thin Films on Different Substrates

Characterization of Conductive LaNiO3 Thin Films on Different Substrates by Sol-Gel