Abstract:Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 (PLZST 2/85/13/2) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO2/Si and LaNiO3(LNO)/SiO2/Si substrates through a modified sol–gel process. The phase structure and microstructure of PLZST 2/85/13/2 antiferroelectric thin films were analysed by x-ray diffraction (XRD), scanning electron microcopy (SEM) and field-emission SEM (FE-SEM). The antiferroelectric nature of the PLZST 2/85/13/2 thin films on two electrodes was demonstrated by the C–V (capacitance–voltage) and P–E (polarization–electric field) measurement. The maximum polarizations for PLZST 2/85/13/2 films on Pt and LNO electrodes were 42 and 18 μC/cm2, respectively. The temperature dependence of the dielectric property of the PLZST 2/85/13/2 films was measured under different dc electric fields. Also, the phase transformation of the PLZST 2/85/13/2 films was studied in detail as a function of temperature and dc electric field.

Preparation of Highly (111)-Oriented (Pb,la)(zr,sn,ti)o-3 (plzst) Antiferroelectric Thin Films by Modified Sol-Gel Process Using A Novel Tin Source, Dibutyloxide of Tin

Composition-Dependent Electrical Properties of (pb, La)(Zr, Sn, Ti)O-3 Antiferroelectric Thin Films Grown on Platinum-Buffered Silicon Substrates

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O 3 and Pb (Nb,Zr,Sn,Ti)O 3 antiferroelectric thin films deposited on LaNiO 3 -buffered silicon substrates by sol-gel processing

Fabrication and Characterization of Sol–Gel Derived (100)‐textured (pb0.97la0.02)(zr0.95ti0.05)o3 Thin Films

Preparation of Plzt Antiferroelectric Thin Films on Zro2 Buffered Substrates

The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode

Dielectric Properties of Pb<sub>0.97</sub>La<sub>0.02</sub>(Zr<sub>0.87−<i>x</i></sub>Sn<sub><i>x</i></sub>Ti<sub>0.13</sub>)O<sub>3</sub>Thin Films with Compositions near the Morphotropic Phase Boundary

Dielectric and Ferroelectric Properties of Highly Oriented (Pb,nb)(zr,sn,ti)o-3 Thin Films Grown by A Sol-Gel Process

Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin films on LaNiO3/Si substrate

Orientation-dependent Phase Switching Process and Strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Thin Films

Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 antiferroelectric films

Effect of Orientation on the Dielectric Properties of Pb0.97la0.02zr0.95ti0.05o3 (plzt) Antiferroelectric Thin Films

(Pb,la)(zr,sn,ti)o-3 Antiferroelectric Thin Films Grown on Lanio3-Buffered and Pt-Buffered Silicon Substrates by Sol-Gel Processing

Improved field-induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control

Improved Dielectric Properties of (110)-Preferred (pb, La) (zr, Sn, Ti)O-3 Antiferroelectric Thin Films on Metalorganic Decomposition-Derived Lanio3 Buffer Layer

Electric Fatigue In Pb(Nb,Zr,Sn,Ti)O-3 Thin Films Grown By A Sol-Gel Process

Dielectric Properties Of Pb0.97la0.02(Zr0.87-Xsnxti0.13)O-3 Thin Films With Compositions Near The Morphotropic Phase Boundary

Effect of the Orientation on the Ferroelectric–antiferroelectric Behavior of Sol–gel Deposited (pb,nb)(zr,sn,ti)o3 Thin Films

Phase Transformation Properties of Highly (100)-Oriented Plzst 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb-Srtio3 Single-Crystal Substrates

Metal-organic Chemical Liquid Deposited (110)-Preferred LaNiO3 Buffer Layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Films

Phase Stability and Pyroelectricity of Antiferroelectric Plzst Oxide